Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

Nano Letters

Volumn 6, Issue 9, 2006, Pages 1842-1846

  Lind, Erik ^a,b   Persson, Ann I ^a   Samuelson, Lars ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIXED GATE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR; SUBTHRESHOLD SWING;

ELECTRON MOBILITY; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

INDIUM; INDIUM ARSENIDE; NANOTUBE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

ARSENICALS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INDIUM; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOTECHNOLOGY; NANOTUBES; TRANSISTORS;

EID: 33749684169     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052468b     Document Type: Article

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