Experimental study of mobility in [110]- and [100]-directed multiple silicon nanowire GAA MOSFETs on (100) SOI

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 32-33

  Chen, Jiezhi ^a   Saraya, Takuya ^a   Miyaji, Kousuke ^a   Shimizu, Ken ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; ELECTRICAL ENGINEERING; ELECTRON MOBILITY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; SILICON; TECHNOLOGY;

C-V METHODS; EXPERIMENTAL INVESTIGATIONS; EXPERIMENTAL STUDIES; MOBILITY CHARACTERISTICS; MONOTONICALLY; MOSFETS; SILICON-NANOWIRE; VLSI TECHNOLOGIES;

HOLE MOBILITY;

EID: 51949084083     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588552     Document Type: Conference Paper

References (5)

1. T. Tezuka et al, IEDM, p.887, 2007.
2. S.D. Suk et al, IEDM, p.891, 2007.
3. M.J.H. van Dal et al, VLSI, p. 110, 2007.
4. A. Toriumi et al, IEDM, p.671, 2006.
5. G. Tsutsui et al, IEDM, p.729, 2005.