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Volumn 6, Issue 8, 2013, Pages
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Performance improvements of metal-oxide-nitride-oxide-silicon nonvolatile memory with ZrO2 charge-trapping layer by using nitrogen incorporation
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL BONDINGS;
INTERFACE QUALITY;
MEMORY PERFORMANCE;
METAL OXIDE NITRIDE OXIDE SILICONS;
NITROGEN INCORPORATION;
NON-VOLATILE MEMORY;
PROGRAM/ERASE SPEED;
ZIRCONIUM SILICATE;
CHARGE TRAPPING;
NITRIDES;
NITROGEN;
PHOTOELECTRONS;
SILICATES;
SILICON;
SILICON OXIDES;
X RAY DIFFRACTION;
X RAY PHOTOELECTRON SPECTROSCOPY;
ZIRCONIUM ALLOYS;
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EID: 84883007541
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.7567/APEX.6.084202 Document Type: Article |
Times cited : (26)
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References (22)
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