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Volumn 6, Issue 8, 2013, Pages

Performance improvements of metal-oxide-nitride-oxide-silicon nonvolatile memory with ZrO2 charge-trapping layer by using nitrogen incorporation

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDINGS; INTERFACE QUALITY; MEMORY PERFORMANCE; METAL OXIDE NITRIDE OXIDE SILICONS; NITROGEN INCORPORATION; NON-VOLATILE MEMORY; PROGRAM/ERASE SPEED; ZIRCONIUM SILICATE;

EID: 84883007541     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.084202     Document Type: Article
Times cited : (26)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.