Spatial distribution of charge traps in a SONOS-type Flash memory using a high-κ trapping layer

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3317-3324

  Zhang, Gang ^a   Wang, Xin Peng ^b,c   Yoo, Won Jong ^a   Li, Ming Fu ^c,d  

^a Sungkyunkwan University   (South Korea)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d FUDAN UNIVERSITY   (China)

Author keywords

Equivalent oxide thickness; Flash memories; Flash memory; Time dependent method; Vertical trap location

Indexed keywords

CHARGE TRAPPING; DATA STORAGE EQUIPMENT; HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; ZIRCONIA;

EQUIVALENT OXIDE THICKNESS; VERTICAL TRAP LOCATION;

FLASH MEMORY;

EID: 38349035934     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908888     Document Type: Article

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