SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 9, 2010, Pages

The bias temperature instability characteristics of in situ nitrogen incorporated ZrOx Ny Gate Dielectrics

(12) Jung, Hyung Suk a Park, Jung Min b Kim, Hyo Kyeom a Kim, Jeong Hwan a Won, Seok Jun a Lee, Joohwi a Lee, Sang Young a Hwang, Cheol Seong a Kim, Weon Hong b Song, Min Woo b Lee, Nae In b Cho, Deok Yong c

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

c Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY; BULK TRAPS; EQUIVALENT OXIDE THICKNESS; GATE STRESS; IN-SITU; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; TURN-AROUNDS;

DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS DEVICES; OXYGEN; OXYGEN VACANCIES; ZIRCONIUM ALLOYS;

GATE DIELECTRICS;

EID: 77954729800 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3456518 Document Type: Article

Times cited : (5)

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