Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

Journal of Applied Physics

Volumn 114, Issue 5, 2013, Pages

  Olea, J ^a,b   Pastor, D ^a,b   Del Prado, A ^b   Garcia Hemme E ^b   Garcia Hernansanz R ^b   Martil I ^b   Gonzalez Diaz G ^b  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CO-EFFICIENT; FABRICATION PROCESS; OPTICAL CHARACTERIZATION; OPTOELECTRONIC CHARACTERIZATION; PHOTOEXCITED CARRIERS; PHOTOVOLTAIC DEVICES; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY IMAGES;

ENERGY GAP; PHOTOCONDUCTIVITY; PULSED LASERS; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 84882237759     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817254     Document Type: Article

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