Infrared surface absorption in Si(111)2x1 observed with reflectance anisotropy spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1533071-1533073

  Goletti, C ^a   Bussetti, G ^a   Arciprete, F ^a   Chiaradia, P ^a   Chiarotti, G ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ANISOTROPY; ARTICLE; ELECTRON DIFFRACTION; INFRARED RADIATION; OPTICS; OXIDATION; REFLECTANCE ANISOTROPY SPECTROSCOPY; SEMICONDUCTOR; SPECTROSCOPY; SURFACE PROPERTY; TEMPERATURE;

EID: 0037110036     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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24. 1/2 plot [high-temperature expansion of expressions (2) and (4)], thus demonstrating the validity of the delocalized band model. However, the point added at LHeT is probably the fruit of misunderstanding, since we have never succeeded in taking a point at LHeT, nor we could have done it because of the reasons outlined in the text.