Insulator-to-metal transition in sulfur-doped silicon

Physical Review Letters

Volumn 106, Issue 17, 2011, Pages

  Winkler, Mark T ^a   Recht, Daniel ^a   Sher, Meng Ju ^a   Said, Aurore J ^a   Mazur, Eric ^a   Aziz, Michael J ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB GAPS; CRYSTALLINE SILICONS; DEEP LEVEL; DELOCALIZATIONS; EQUILIBRIUM CONCENTRATION; HALL EFFECT MEASUREMENT; INSULATOR-TO-METAL TRANSITIONS; INTERMEDIATE BANDS; METALLIC CONDUCTION; NON-EQUILIBRIUM CONCENTRATIONS; PHOTOVOLTAICS; RESOLIDIFICATION; SULFUR CONCENTRATIONS; TEMPERATURE-DEPENDENT CONDUCTIVITY; TO EFFECT; VARIABLE-RANGE HOPPING;

DOPING (ADDITIVES); HALL EFFECT; ION IMPLANTATION; PHOTOVOLTAIC EFFECTS; SULFUR;

METAL INSULATOR TRANSITION;

EID: 79960641752     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.106.178701     Document Type: Article

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