Investigation of damage-induced defects in silicon by TCT

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 356-360

  Fretwurst, E ^c   Eremin, V ^a   Feick, H ^c   Gerhardt, J ^c   Li, Z ^b   Lindstrom G ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GAMMA RAYS; IRRADIATION; LASER PULSES; LIGHTING; NEUTRONS; RADIATION DAMAGE; SILICON;

FREE CHARGE CARRIER; HOLE; NANOSECOND; SILICON DETECTORS; TRANSIENT CURRENT TECHNIQUE;

RADIATION DETECTORS;

EID: 0031118343     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00002-8     Document Type: Article

References (6)

1. eff and electrical field transformation at different temperatures in neutron irradiated high resistivity detectors, Report BNL-60154, 1994.
2. V. Eremin and Z. Li, IEEE Trans. Nucl. Sci. 41 (1994) 1907.
3. G.H.R. Kegel, P.F. Bertone, D.L. Case, D.J. DeSimone, C.K.C. Jen, C. Narayan, M. O'Connor and P. Staples, IEEE Trans. Nucl. Sci. NS-39(6) (1992) 2052.
4. J. Gerhardt, Diploma thesis, University of Hamburg, 1996.
5. M. Moll, H. Feick, E. Fretwurst, G. Lindström and C. Schütze, these Proceedings (Int. Conf. on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 1996), Nucl. Instr. and Meth. A 388 (1997) 335.
6. E. Fretwurst, C. Dehn, H. Feick, P. Heydarpoor, G. Lindström, M. Moll, C. Schütze and T. Schulz, Nucl. Instr. and Meth. A 377 (1966) 258.