Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon

Solar Energy Materials and Solar Cells

Volumn 104, Issue , 2012, Pages 159-164

  Pastor, D ^a   Olea, J ^a   Del Prado, A ^a   Garcia Hemme E ^a   Garcia Hernansanz R ^a   Gonzalez Diaz G ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Intermediate band; Ion implantation; Metallic transition; Silicon; Titanium

Indexed keywords

CONCENTRATION PROFILES; DEEP IMPURITIES; DEEP LEVEL; ELECTRICAL MEASUREMENT; ELECTRICAL TRANSPORT MEASUREMENTS; HALL EFFECT MEASUREMENT; HIGH CONCENTRATION; IMPLANTED SAMPLES; IMPURITY CONCENTRATION; INTERMEDIATE BANDS; LOW TEMPERATURES; METALLIC BEHAVIORS; METALLIC TRANSITION; NON-RADIATIVE RECOMBINATIONS; OHMIC BEHAVIOR; RECTIFYING BEHAVIORS; SCHOTTKY; SILICON LAYER; SOLID SOLUBILITIES; TEMPERATURE RANGE; THEORETICAL LIMITS; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; VAN DER PAUW;

ELECTRIC CURRENTS; IMPURITIES; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON;

TITANIUM;

EID: 84861911041     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.04.049     Document Type: Article

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