Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1847-1852

  Tabbal, Malek ^a,c   Kim, Taegon ^a   Warrender, Jeffrey M ^a,d   Aziz, Michael J ^a   Cardozo, B L ^b   Goldman, R S ^b  

^a HARVARD UNIVERSITY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c AMERICAN UNIVERSITY OF BEIRUT   (Lebanon)

^d Benet Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASER TREATMENT; POSTIRRADIATION ANNEALING; PULSED LASER MELTING; SUPERSATURATED ALLOY;

ANNEALING; DARK CURRENTS; EXCIMER LASERS; HALL EFFECT; SILICON; SINGLE CRYSTALS;

SEMICONDUCTOR JUNCTIONS;

EID: 37149000629     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2796184     Document Type: Article

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