Electronic properties of titanium in boron-doped silicon analyzed by temperature-dependent photoluminescence and injection-dependent photoconductance lifetime spectroscopy

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Roth, Thomas ^a   Rüdiger, Marc ^a   Warta, Wilhelm ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BLOOD VESSEL PROSTHESES; BORON; CIVIL AVIATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRONIC PROPERTIES; INJECTION (OIL WELLS); LIGHT EMISSION; LUMINESCENCE; MODULATION; NONMETALS; PHOTOLUMINESCENCE; SILICON; TITANIUM;

CARRIER CAPTURES; DEFECT LEVELS; DEPLETION REGION MODULATIONS; DOPED SILICONS; ENERGY LEVELS; EXCESS CARRIER LIFETIMES; GENERALIZED PLANCK EQUATIONS; LIFETIME SPECTROSCOPIES; MEASUREMENT ARTIFACTS; MEASUREMENT TECHNIQUES; MINORITY CARRIERS; PHOTOCONDUCTANCE LIFETIMES; PHOTOLUMINESCENCE MEASUREMENTS; RECOMBINATION CENTERS; RELIABLE MEASUREMENTS; ROOM TEMPERATURES; SILICON BAND GAPS; SILICON SAMPLES; THEORETICAL MODELS; TIME USING; TRANSIENT SPECTROSCOPIES;

CARRIER LIFETIME;

EID: 54049109617     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2996252     Document Type: Article

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