Plasma enhanced atomic layer deposition of copper: A comparison of precursors

Surface and Coatings Technology

Volumn 230, Issue , 2013, Pages 3-12

  Hagen, D J ^a   Connolly, J ^a   Nagle, R ^a,b   Povey, I M ^a   Rushworth, S ^a   Carolan, P ^a   Ma, P ^c   Pemble, M E ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Intel Ireland Ltd   (Ireland)

^c APPLIED MATERIALS INC   (United States)

Author keywords

Aminoalkoxides; Atomic layer deposition; Copper; Interconnects; Nucleation; Plasma

Indexed keywords

AMINOALKOXIDES; CONDUCTIVE THIN FILMS; LOW TEMPERATURE LIMIT; LOW VAPOR PRESSURES; NUCLEATION MECHANISM; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SUBSTRATE MATERIAL; THREE-DIMENSIONAL ISLAND GROWTH;

ATOMIC LAYER DEPOSITION; COALESCENCE; COPPER; METALLIC FILMS; NUCLEATION; OPTICAL INTERCONNECTS; PLASMAS; RUTHENIUM; SUBSTRATES;

DEPOSITION;

EID: 84881317787     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2013.06.066     Document Type: Article

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