Room temperature copper seed layer deposition by plasma-enhanced atomic layer deposition

ECS Transactions

Volumn 35, Issue 2, 2011, Pages 125-132

  Mao, J ^a   Eisenbraun, E ^a   Omarjee, V ^b   Korolev, A ^b   Dussarrat, C ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION RATES; PLASMA CVD;

COPPER DEPOSITION; COPPER SEED; FILM PROPERTIES; FLUORINE-FREE; GRAIN SIZE; HIGH POTENTIAL; INTERCONNECT TECHNOLOGY; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 79960825272     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3568854     Document Type: Conference Paper

References (8)

1. C. Hau-Riege et al. Microelectronics Reliability 44, 195-205, (2004)
2. E. Eisenbraun et al. J. Vac. Sci. Technol. B 25, 6, (2007)
3. J.Mao et al., ECS Trans., Volume 33, issue 12, 125-135 (2010)
4. M. Zhang et al. Interconnect technology conference, IEEE, p170-172 (1999)
5. R. Gordon et al. WO04046417 and US2006/0141155 (2004, 2006)
6. R. Gordon et al., Inorg. Chem. 44, 1728-1735 (2005)
7. R. Gordon et al., J. of Electrochemical Society, 153 (11), C787-794, (2006)
8. J.Mao et al., ALD2010 conference, Seoul, Korea (2010)