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Volumn 141, Issue 2-3, 2013, Pages 744-751

Direct current sputtered aluminum-doped zinc oxide films for thin crystalline silicon heterojunction solar cell

Author keywords

Electrical properties; Optical properties; Oxides; Sputtering; Thin films

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; CRYSTALLINE SILICON HETEROJUNCTION SOLAR CELLS; DIRECT CURRENT MAGNETRON SPUTTERING; ELECTRICAL CONDUCTIVITY; FUNCTIONAL PROPERTIES; HETEROJUNCTION SOLAR CELLS; PROCESSING TEMPERATURE; SILICON HETEROJUNCTIONS;

EID: 84881130956     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2013.06.002     Document Type: Article
Times cited : (11)

References (32)
  • 1
    • 17044403452 scopus 로고    scopus 로고
    • Transparent conducting oxide semiconductors for transparent electrodes
    • T. Minami Transparent conducting oxide semiconductors for transparent electrodes Semicond. Sci. Technol. 20 2005 S35 S44
    • (2005) Semicond. Sci. Technol. , vol.20
    • Minami, T.1
  • 4
    • 77950690734 scopus 로고    scopus 로고
    • Oxygen influence on sputtered high rate ZnO:Al films from dual rotatable ceramic targets
    • H. Zhu, J. Hüpkes, E. Bunte, and S.M. Huang Oxygen influence on sputtered high rate ZnO:Al films from dual rotatable ceramic targets Appl. Surf. Sci. 256 2010 4601 4605
    • (2010) Appl. Surf. Sci. , vol.256 , pp. 4601-4605
    • Zhu, H.1    Hüpkes, J.2    Bunte, E.3    Huang, S.M.4
  • 5
    • 1642299625 scopus 로고    scopus 로고
    • Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition
    • H. Agura, A. Suzuki, T. Matsushita, T. Aoki, and M. Okuda Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition Thin Solid Films 445 2003 263 267
    • (2003) Thin Solid Films , vol.445 , pp. 263-267
    • Agura, H.1    Suzuki, A.2    Matsushita, T.3    Aoki, T.4    Okuda, M.5
  • 7
    • 80051740548 scopus 로고    scopus 로고
    • Low pressure chemical vapor deposition of aluminum-doped zinc oxide for transparent conducting electrodes
    • W.H. Kim, W.J. Maeng, M.K. Kim, and H. Kima Low pressure chemical vapor deposition of aluminum-doped zinc oxide for transparent conducting electrodes J. Electrochem. Soc. 138 2011 D495 D499
    • (2011) J. Electrochem. Soc. , vol.138
    • Kim, W.H.1    Maeng, W.J.2    Kim, M.K.3    Kima, H.4
  • 10
    • 42649137956 scopus 로고    scopus 로고
    • High rate direct current magnetron sputtered and texture-etched zinc oxide films for silicon thin film solar cells
    • T. Tohsophon, J. Hüpkes, H. Siekmann, B. Rech, M. Schultheis, and N. Sirikulrat High rate direct current magnetron sputtered and texture-etched zinc oxide films for silicon thin film solar cells Thin Solid Films 516 2008 4628 4632
    • (2008) Thin Solid Films , vol.516 , pp. 4628-4632
    • Tohsophon, T.1    Hüpkes, J.2    Siekmann, H.3    Rech, B.4    Schultheis, M.5    Sirikulrat, N.6
  • 11
  • 14
    • 54249162981 scopus 로고    scopus 로고
    • Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition
    • B.L. Zhu, X.Z. Zhao, S. Xu, F.H. Su, G.H. Li, X.G. Wu, J. Wu, R. Wu, and J. Liu Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition Jpn. J. Appl. Phys. 47 2008 2225 2229
    • (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 2225-2229
    • Zhu, B.L.1    Zhao, X.Z.2    Xu, S.3    Su, F.H.4    Li, G.H.5    Wu, X.G.6    Wu, J.7    Wu, R.8    Liu, J.9
  • 15
    • 79952617889 scopus 로고    scopus 로고
    • Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target
    • B.K. Shin, T.I. Lee, J.P. Kar, M.J. Lee, K.I. Park, K.J. Ahn, K.Y. Yeom, J.H. Cho, and J.M. Myoung Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target Mater. Sci. Semicond. Proc. 14 2011 23 27
    • (2011) Mater. Sci. Semicond. Proc. , vol.14 , pp. 23-27
    • Shin, B.K.1    Lee, T.I.2    Kar, J.P.3    Lee, M.J.4    Park, K.I.5    Ahn, K.J.6    Yeom, K.Y.7    Cho, J.H.8    Myoung, J.M.9
  • 16
    • 78649940946 scopus 로고    scopus 로고
    • Effect of substrate temperature on the properties of Al-doped ZnO films by RF magnetron sputtering
    • Y.B. Wu, S. Lei, Z. Wang, R.H. Zhao, L. Huang, and H. Li Effect of substrate temperature on the properties of Al-doped ZnO films by RF magnetron sputtering Mater. Sci. Forum 663-665 2010 1293 1297
    • (2010) Mater. Sci. Forum , vol.663-665 , pp. 1293-1297
    • Wu, Y.B.1    Lei, S.2    Wang, Z.3    Zhao, R.H.4    Huang, L.5    Li, H.6
  • 18
    • 73449094909 scopus 로고    scopus 로고
    • Effects of sputtering pressure and thickness on properties of ZnO:Al films deposited on polymer substrates
    • J.H. Lee Effects of sputtering pressure and thickness on properties of ZnO:Al films deposited on polymer substrates J. Electroceram. 23 2009 512 518
    • (2009) J. Electroceram. , vol.23 , pp. 512-518
    • Lee, J.H.1
  • 19
    • 0141748219 scopus 로고    scopus 로고
    • Modified Thornton model for magnetron sputtered zinc oxide: Film structure and etching behavior
    • O. Kluth, G. Schöpe, J. Hüpkes, C. Agashe, J. Müller, and B. Rech Modified Thornton model for magnetron sputtered zinc oxide: film structure and etching behavior Thin Solid Films 442 2003 80 85
    • (2003) Thin Solid Films , vol.442 , pp. 80-85
    • Kluth, O.1    Schöpe, G.2    Hüpkes, J.3    Agashe, C.4    Müller, J.5    Rech, B.6
  • 20
    • 0031162080 scopus 로고    scopus 로고
    • Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering
    • K.H. Kim, K.C. Park, and D.Y. Ma Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering J. Appl. Phys. 81 1997 7764 7772
    • (1997) J. Appl. Phys. , vol.81 , pp. 7764-7772
    • Kim, K.H.1    Park, K.C.2    Ma, D.Y.3
  • 21
    • 52449106758 scopus 로고    scopus 로고
    • Chemical bath deposition of ultraviolet luminescent indium tin hydroxide film: A new synthetic route to transparent ITO film
    • Y. Qiu, L.P.H. Jeurgens, P. Bellina, P. Gerstel, L.Q. Jiang, J. Bill, and F. Aldinger Chemical bath deposition of ultraviolet luminescent indium tin hydroxide film: a new synthetic route to transparent ITO film Adv. Func. Mater. 18 2008 2572 2583
    • (2008) Adv. Func. Mater. , vol.18 , pp. 2572-2583
    • Qiu, Y.1    Jeurgens, L.P.H.2    Bellina, P.3    Gerstel, P.4    Jiang, L.Q.5    Bill, J.6    Aldinger, F.7
  • 22
    • 78650158581 scopus 로고    scopus 로고
    • Stress-dependent band gap shift and quenching of defects in Al-doped ZnO films
    • B.K. Sharma, and N. Khare Stress-dependent band gap shift and quenching of defects in Al-doped ZnO films J. Phys. D Appl. Phys. 43 2010 465402
    • (2010) J. Phys. D Appl. Phys. , vol.43 , pp. 465402
    • Sharma, B.K.1    Khare, N.2
  • 24
    • 78049319379 scopus 로고    scopus 로고
    • Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition
    • P.C. Yao, S.T. Hang, Y.S. Lin, W.T. Yen, and Y.C. Lin Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition Appl. Surf. Sci. 257 2010 1441 1448
    • (2010) Appl. Surf. Sci. , vol.257 , pp. 1441-1448
    • Yao, P.C.1    Hang, S.T.2    Lin, Y.S.3    Yen, W.T.4    Lin, Y.C.5
  • 25
    • 29844447202 scopus 로고    scopus 로고
    • Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films
    • S.Y. Kuo, W.C. Chen, F.I. Laic, C.P. Cheng, H.C. Kuo, S.C. Wang, and W.F. Hsieh Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films J. Crystal Growth 287 2006 78 84
    • (2006) J. Crystal Growth , vol.287 , pp. 78-84
    • Kuo, S.Y.1    Chen, W.C.2    Laic, F.I.3    Cheng, C.P.4    Kuo, H.C.5    Wang, S.C.6    Hsieh, W.F.7
  • 26
    • 79953210336 scopus 로고    scopus 로고
    • Effects of thickness and annealing on the properties of Ti-doped ZnO films by radio frequency magnetron sputtering
    • H.P. Chang, F.H. Wang, J.C. Chao, C.C. Huang, and H.W. Liu Effects of thickness and annealing on the properties of Ti-doped ZnO films by radio frequency magnetron sputtering Curr. Appl. Phys. 11 2011 S185 S190
    • (2011) Curr. Appl. Phys. , vol.11
    • Chang, H.P.1    Wang, F.H.2    Chao, J.C.3    Huang, C.C.4    Liu, H.W.5
  • 27
    • 79951683119 scopus 로고    scopus 로고
    • Effects of post-annealing on structural, optical and electrical properties of Al-doped ZnO thin films
    • H. Tong, Z.H. Deng, Z.G. Liu, C.G. Huang, J.Q. Huang, H. Lan, C. Wang, and Y.G. Cao Effects of post-annealing on structural, optical and electrical properties of Al-doped ZnO thin films Appl. Surf. Sci. 257 2011 4906 4911
    • (2011) Appl. Surf. Sci. , vol.257 , pp. 4906-4911
    • Tong, H.1    Deng, Z.H.2    Liu, Z.G.3    Huang, C.G.4    Huang, J.Q.5    Lan, H.6    Wang, C.7    Cao, Y.G.8
  • 28
    • 76649112402 scopus 로고    scopus 로고
    • High quality ITO thin films grown by DC and RF sputtering without oxygen
    • O. Tuna, Y. Selamet, G. Aygun, and L. Ozyuzer High quality ITO thin films grown by DC and RF sputtering without oxygen J. Phys. D Appl. Phys. 43 2010 055402
    • (2010) J. Phys. D Appl. Phys. , vol.43 , pp. 055402
    • Tuna, O.1    Selamet, Y.2    Aygun, G.3    Ozyuzer, L.4
  • 29
    • 33745444518 scopus 로고    scopus 로고
    • Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature
    • F. Kurdesau, G. Khripunov, A.F. da Cunha, M. Kaelin, and A.N. Tiwari Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature J. Non-Cryst. Solids 352 2006 1466 1470
    • (2006) J. Non-Cryst. Solids , vol.352 , pp. 1466-1470
    • Kurdesau, F.1    Khripunov, G.2    Da Cunha, A.F.3    Kaelin, M.4    Tiwari, A.N.5
  • 32
    • 34548692775 scopus 로고    scopus 로고
    • Boron-doped a-Si:H/c-Si interface passivation: Degradation mechanism
    • S. De Wolf, and M. Kondo Boron-doped a-Si:H/c-Si interface passivation: degradation mechanism Appl. Phys. Lett. 91 2007 112109
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 112109
    • De Wolf, S.1    Kondo, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.