Stress-dependent band gap shift and quenching of defects in Al-doped ZnO films

Journal of Physics D: Applied Physics

Volumn 43, Issue 46, 2010, Pages

  Sharma, Bhupendra K ^a   Khare, Neeraj ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; AL-DOPING; AZO FILMS; BAND GAP SHIFTS; BAND GAPS; BLUE SHIFT; BURSTEIN-MOSS SHIFT; CHEMICAL VAPOUR DEPOSITION; PHOTOLUMINESCENCE SPECTRUM; QUARTZ SUBSTRATE; RED SHIFT; STRESS-DEPENDENT; VACANCY-RELATED DEFECTS; VISIBLE REGION; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES; ZINC INTERSTITIALS; ZNO; ZNO FILMS; ZNO MATRIX;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DEFECTS; DOPING (ADDITIVES); ENERGY GAP; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PHOTOLUMINESCENCE; QUARTZ; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 78650158581     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/46/465402     Document Type: Article

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