SnO2 thin films doped indium prepared by the sol-gel method: Structure, electrical and photoluminescence properties

Journal of Sol-Gel Science and Technology

Volumn 67, Issue 1, 2013, Pages 29-38

  Sujatha Lekshmy, S ^a   Joy, K ^a,b  

^a MAR IVANIOS COLLEGE   (India)

^b Heera College of Engineering and Technology ^*  (India)

Author keywords

Atomic force microscopy; Indium tinoxide; Photoluminescence; Thin films; X ray diffraction

Indexed keywords

DIP COATING TECHNIQUES; ELECTRICAL AND OPTICAL PROPERTIES; HIGH-TEMPERATURE ANNEALING; NON-RADIATIVE TRANSITIONS; OPTICAL BAND GAP ENERGY; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; TRANSMISSION SPECTRUMS;

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; GRAIN GROWTH; HIGHER ORDER STATISTICS; INDIUM; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SUBSTRATES; THIN FILMS; TIN; TIN OXIDES; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84881025988     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-013-3047-0     Document Type: Article

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