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Volumn 517, Issue 2, 2008, Pages 681-685
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Influence of the annealing temperature on the properties of undoped indium oxide thin films obtained by the sol-gel method
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Author keywords
Electrical properties; In2O3 films; Indium oxide; Sol gel; Thin films; Transparent conductive oxides; X ray diffraction
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Indexed keywords
COLLOIDS;
CONDUCTIVE FILMS;
CRYSTALLINE MATERIALS;
DIFFRACTION;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENTS;
ELECTRIC PROPERTIES;
GALVANOMAGNETIC EFFECTS;
GELATION;
GELS;
HALL EFFECT;
INDIUM;
LIGHT;
MAGNETIC FIELD EFFECTS;
OXIDE FILMS;
PHOTOCONDUCTIVITY;
QUALITY CONTROL;
SOL-GEL PROCESS;
SOL-GELS;
SOLS;
SPACE PROBES;
THICK FILMS;
THIN FILMS;
ULTRAVIOLET SPECTROSCOPY;
X RAY ANALYSIS;
X RAY DIFFRACTION;
ELECTRICAL PROPERTIES;
IN2O3 FILMS;
INDIUM OXIDE;
SOL-GEL;
TRANSPARENT CONDUCTIVE OXIDES;
ANNEALING;
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EID: 55049095802
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.07.036 Document Type: Article |
Times cited : (45)
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References (22)
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