Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques

Thin Solid Films

Volumn 345, Issue 2, 1999, Pages 273-277

  Kulkarni, A K ^a   Schulz, Kirk H ^a   Lim, T S ^a   Khan, M ^a  

^a Michigan Technological University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ELECTRIC RESISTANCE; ELECTRON SCATTERING; GRAIN SIZE AND SHAPE; INDIUM COMPOUNDS; PARTIAL PRESSURE; SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SHEET RESISTANCE;

CONDUCTIVE FILMS;

EID: 0032651171     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01430-8     Document Type: Article

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