Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O3 thin films

Journal of Sol-Gel Science and Technology

Volumn 49, Issue 1, 2009, Pages 35-46

  Cavalcante, L S ^a   Sczancoski, J C ^a   De Vicente, F S ^b   Frabbro, M T ^b   Li, M Siu ^b   Varela, J A ^c   Longo, E ^c  

^a FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

BZT thin film; Dielectric; Microstructure; Optical band gap; Photoluminescence

Indexed keywords

AFM; BZT THIN FILMS; DEEP HOLES; FEG-SEM; OPTICAL BANDS; PHOTOLUMINESCENCE MEASUREMENTS; POLYMERIZATION METHOD; PROCESSING TIME; UV-VIS ABSORPTION SPECTRA; VISIBLE LIGHT EMISSION;

ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; DIELECTRIC LOSSES; DIELECTRIC MATERIALS; MICROSTRUCTURE; OPTICAL BAND GAPS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION;

THIN FILMS;

EID: 70149087065     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-008-1841-x     Document Type: Article

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