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Volumn 10, Issue 3, 2010, Pages 880-885

Annealing temperature dependent on structural, optical and electrical properties of indium oxide thin films deposited by electron beam evaporation method

Author keywords

Annealing process; Indium oxide; Nanocrystals; Optical band gap; Thin films

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; CHEMICAL COMPOSITIONS; DEPOSITED FILMS; ELECTRON BEAM EVAPORATION; ELECTRON BEAM EVAPORATION METHODS; FILM STRUCTURE; INDIUM OXIDE; OPTICAL AND ELECTRICAL PROPERTIES; PACKING DENSITY; PREFERENTIAL ORIENTATION; SPECTRAL DATA; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL STUDIES; XRD;

EID: 73549102169     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.10.014     Document Type: Article
Times cited : (73)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.