Effects of interfacial fluorination on performance enhancement of high-k-based charge trap flash memory

Japanese Journal of Applied Physics

Volumn 52, Issue 7 PART 1, 2013, Pages

  Wang, Chenjie ^a   Huo, Zongliang ^a   Liu, Ziyu ^a   Liu, Yu ^a   Cui, Yanxiang ^a   Wang, Yumei ^a   Li, Fanghua ^a   Liu, Ming ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP FLASH MEMORY; DATA RETENTION; DEPTH-PROFILE ANALYSIS; EFFECTIVE PERFORMANCE; INTERFACIAL LAYER; MEMORY STRUCTURE; PERFORMANCE AND RELIABILITIES; PERFORMANCE ENHANCEMENTS;

FLASH MEMORY; FLUORINATION; FLUORINE; HAFNIUM OXIDES; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

HALOGENATION;

EID: 84881004246     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.070201     Document Type: Article

References (23)

1. Y. Shin, J. Choi, C. Kang, C. Lee, K.-T. Park, J.-S. Lee, J. Sel, V. Kim, B. Choi, J. Sim, D. Kim, H.-J. Cho, and K. Kim: IEDM Tech. Dig., 2005, p. 327.
2. C.-H. Lee, S.-H. Hur, Y.-C. Shin, J.-H. Choi, D.-G. Park, and K. Kim: Appl. Phys. Lett. 86 (2005) 152908.
3. H. W. You and W. J. Cho: Appl. Phys. Lett. 96 (2010) 093506.
4. H. Hamamura, T. Ishida, T. Mine, Y. Okuyama, D. Hisamoto, Y. Shimamoto, S. Kimura, and K. Torii: Proc. IEEE Int. Reliability Physics Symp., 2008, p. 412.
5. L. Larcher and A. Padovani: Microelectron. Reliab. 50 (2010) 1251.
6. S. Maikap, H. Y. Lee, T.-Y. Wang, P.-J. Tzeng, C. C. Wang, L. S. Lee, K. C. Liu, J.-R. Yang, and M.-J. Tsai: Semicond. Sci. Technol. 22 (2007) 884.
7. C. S. Lai, W. C. Wu, T. S. Chao, J. H. Chen, J. C. Wang, L.-L. Tay, and N. Rowell: Appl. Phys. Lett. 89 (2006) 072904.
8. J. L. Gavartin, D. Muñoz Ramo, A. L. Shluger, G. Bersuker, and B. H. Lee: Appl. Phys. Lett. 89 (2006) 082908.
9. C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa, and D. L. Kwong: IEDM Tech. Dig., 2002, p. 857.
10. L. Wang, K. Xue, J. B. Xu, A. P. Huang, and P. K. Chu: Appl. Phys. Lett. 88 (2006) 072903.
11. C.-R. Hsieh, Y.-Y. Chen, K.-W. Lu, G. Lin, and J.-C. Lou: IEEE Electron Device Lett. 31 (2010) 1446.
12. C.-R. Hsieh, Y.-Y. Chen, K.-W. Lu, G. Lin, and J.-C. Lou: Microelectron. Eng. 88 (2011) 945.
13. B. H. Lee, L. Kang, R. Nieh, W.-J. Qi, and J. C. Lee: Appl. Phys. Lett. 76 (2000) 1926.
14. C. S. Lai, W. C. Wu, J. C. Wang, and T. S. Chao: Appl. Phys. Lett. 86 (2005) 222905.
15. W.-C. Wu, C.-S. Lai, S.-C. Lee, M.-W. Ma, T.-S. Chao, J.-C. Wang, C.-W. Hsu, P.-C. Chou, J.-H. Chen, K.-H. Kao, W.-C. Lo, T.-Y. Lu, L.-L. Tay, and N. Rowell: IEDM Tech. Dig., 2008, p. 1.
16. S. Verma, G. Bersuker, D. C. Gilmer, A. Padovani, H. Park, A. Nainani, D. Heh, J. Huang, J. Jiang, K. Parat, P. D. Kirsch, L. Larcher, H.-H. Tseng, K. C. Saraswat, and R. Jammy: Proc. IEEE Int. Memory Workshop, 2009, p. 1.
17. T. L. Duan, H. Y. Yu, L. Wu, Z. R. Wang, Y. L. Foo, and J. S. Pan: Appl. Phys. Lett. 99 (2011) 012902.
18. E.-A. Choi and K. J. Chang: Appl. Phys. Lett. 94 (2009) 122901.
19. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, G. Groeseneken, H. E. Maes, and U. Schwalke: IEEE Electron Device Lett. 24 (2003) 87.
20. G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, R. Choi, and B. H. Lee: IEEE Trans. Device Mater. Reliab. 7 (2007) 138.
21. C. Sandhya, U. Ganguly, K. K. Singh, P. K. Singh, C. Olsen, S. M. Seutter, R. Hung, G. Conti, K. Ahmed, N. Krishna, J. Vasi, and S. Mahapatra: Proc. IEEE Int. Reliability Physics Symp., 2008, p. 406.
22. Y.-Y. Chen and C.-R. Hsieh: IEEE Electron Device Lett. 31 (2010) 1178.
23. K. Seo, R. Sreenivasan, P. C. Mclntyre, and K. C. Saraswat: IEDM Tech. Dig., 2005, p. 420.