Electron trapping characteristics and scalability of HfO2 as a trapping layer in SONOS-type flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 412-416

  Hamamura, Hirotaka ^a   Ishida, Takeshi ^a   Mine, Toshiyuki ^a   Okuyama, Yutaka ^a   Hisamoto, Digh ^a   Shimamoto, Yasuhiro ^a   Kimura, ShiN'Ichiro ^a   Torii, Kazuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Avalanche injection; Distribution; EOT scaling; HfO2; Plasma nitridation; SONOS; Trap

Indexed keywords

HAFNIUM;

AVALANCHE INJECTION; DISTRIBUTION; EOT SCALING; HFO2; PLASMA NITRIDATION; SONOS; TRAP;

HAFNIUM COMPOUNDS;

EID: 51549110794     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558920     Document Type: Conference Paper

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