Charge trapping and detrapping behavior of fluorinated HfO2SiON gate stacked nMOSFET

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1178-1180

  Chen, Yung Yu ^a   Hsieh, Chih Ren ^b  

^a LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Charge detrapping; fluorine; HfO2

Indexed keywords

BOND FORMATION; CHARGE DE-TRAPPING; DE-TRAPPING; FLUORINATED HFO; GATE STACKS; HFO2; INTERFACE TRAP DENSITY; NMOSFET; PROCESS APPLICATIONS;

CHARGE TRAPPING; HAFNIUM; HAFNIUM COMPOUNDS;

FLUORINE;

EID: 78049259596     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2064753     Document Type: Article

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