Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics

Microelectronic Engineering

Volumn 88, Issue 6, 2011, Pages 945-949

  Hsieh, Chih Ren ^a   Chen, Yung Yu ^b   Lu, Kwung Wen ^a   Lin, Gray ^a   Lou, Jen Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Flash memory; Fluorine; High k dielectric; Inter poly

Indexed keywords

ALUMINUM OXIDES; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTY; FLUORINATED HFO; FLUORINE PASSIVATION; GATE COUPLING; HIGH-K DIELECTRIC; INSULATING PROPERTIES; INTER-POLY; INTERFACE ROUGHNESS; INTERFACIAL LAYER; INTERPOLY DIELECTRICS; MEMORY APPLICATIONS; RE-OXIDATION; TRAP DENSITY;

ALUMINUM; DANGLING BONDS; ELECTRIC PROPERTIES; FLASH MEMORY; FLUORINATION; FLUORINE; HAFNIUM; HAFNIUM OXIDES; HALOGENATION; OXIDES; OXYGEN; OXYGEN VACANCIES; PASSIVATION;

DIELECTRIC MATERIALS;

EID: 79952450495     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.12.027     Document Type: Article

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