Characteristics of the fluorinated high-κ inter-poly dielectrics

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1446-1448

  Hsieh, Chih Ren ^a   Chen, Yung Yu ^b   Lu, Kwung Wen ^a   Lin, Gray ^a   Lou, Jen Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Al2O3; fluorine, HfO2

Indexed keywords

AL2O3; ALUMINUM OXIDES; DIELECTRIC CHARACTERISTICS; DIELECTRIC CONSTANTS; GATE COUPLING; INTERPOLY DIELECTRICS; SMOOTH INTERFACE; TRAP DENSITY;

ALUMINUM; FLASH MEMORY; FLUORINE; HAFNIUM; HAFNIUM OXIDES; OXIDES;

DIELECTRIC MATERIALS;

EID: 78649450109     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2074181     Document Type: Article

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