SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 99, Issue 1, 2011, Pages

Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy

(6) Duan, T L a Yu, H Y a Wu, L a Wang, Z R a Foo, Y L b Pan, J S b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY SHIFTS; CAPACITOR STRUCTURES; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIFFERENTIAL CHARGING; ELECTRICAL MEASUREMENT; GATE-LAST; HAFNIUM SILICATES; HIGH-K DIELECTRIC; INTERNAL ELECTRIC FIELDS; INTERNAL FIELD; POST DEPOSITION ANNEALING;

ATOMIC LAYER DEPOSITION; BINDING ENERGY; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HAFNIUM; HAFNIUM OXIDES; METALLIC COMPOUNDS; MOS DEVICES; OXYGEN VACANCIES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SILICATES; SILICON;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79960509316 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3609233 Document Type: Article

Times cited : (34)

References (12)

1
- 83855163176
- P. Packan, S. Akbar, M. Armstrong, M. Brazier, H. Deshpande, K. Dev, G. Ding, T. Ghani, O. Golonzka, W. Han, J. He, R. Heussner, R. James, J. Jopling, C. Kenyon, S.-H. Lee, M. Liu, S. Lodha, B. Mattis, A. Murthy, L. Neiberg, J. Neirynck, S. Pae, C. Parker, L. Pipes, J. Sebastian, J. Seiple, B. Sell, S. Sivakumar, B. Song, A. St. Amour, K. Tone, T. Troeger, C. Weber, K. Zhang, S. Natarajan, Tech. Dig. - Int. Electron Devices Meet. 2009, 659.
- (2009) Tech. Dig. - Int. Electron Devices Meet. , pp. 659
- Packan, P.¹ Akbar, S.² Armstrong, M.³ Brazier, M.⁴ Deshpande, H.⁵ Dev, K.⁶ Ding, G.⁷ Ghani, T.⁸ Golonzka, O.⁹ Han, W.¹⁰ He, J.¹¹ Heussner, R.¹² James, R.¹³ Jopling, J.¹⁴ Kenyon, C.¹⁵ Lee, S.-H.¹⁶ Liu, M.¹⁷ Lodha, S.¹⁸ Mattis, B.¹⁹ Murthy, A.²⁰ more..

2
- 79960505883
- K.-Y. Lim, H. Lee, C. Ryu, K.-I. Seo, U. Kwon, S. Kim, J. Choi, K. Oh, H.-K. Jeon, C. Song, T.-O. Kwon, J. Cho, S. Lee, Y. Sohn, H. S. Yoon, J. Park, K. Lee, W. Kim, E. Lee, S.-P. Sim, C. G. Koh, S. B. Kang, S. Choi, and C. Chung, Tech. Dig. -Int. Electron Devices Meet. 2010, 229.
- (2010) Tech. Dig. -Int. Electron Devices Meet. , pp. 229
- Lim, K.-Y.¹ Lee, H.² Ryu, C.³ Seo, K.-I.⁴ Kwon, U.⁵ Kim, S.⁶ Choi, J.⁷ Oh, K.⁸ Jeon, H.-K.⁹ Song, C.¹⁰ Kwon, T.-O.¹¹ Cho, J.¹² Lee, S.¹³ Sohn, Y.¹⁴ Yoon, H.S.¹⁵ Park, J.¹⁶ Lee, K.¹⁷ Kim, W.¹⁸ Lee, E.¹⁹ Sim, S.-P.²⁰ more..

3
- 58149311063
- 10.1063/1.3058695
- H. Y. Yu, S. Z. Chang, M. Aoulaiche, X. P. Wang, C. Adelmann, B. Kazer, P. Absil, A. Lauwers, and S. Biesemans, Appl. Phys. Lett. 93, 263502 (2008). 10.1063/1.3058695
- (2008) Appl. Phys. Lett. , vol.93 , pp. 263502
- Yu, H.Y.¹ Chang, S.Z.² Aoulaiche, M.³ Wang, X.P.⁴ Adelmann, C.⁵ Kazer, B.⁶ Absil, P.⁷ Lauwers, A.⁸ Biesemans, S.⁹

4
- 33646711633
- 2/Si(100) interfaces
- DOI 10.1063/1.2201050
- D.-Y. Cho, S.-J. Oh, Y. J. Chang, T. W. Noh, R. Jung, J.-C. Lee, Appl. Phys. Lett. 88, 193502 (2006). 10.1063/1.2201050 (Pubitemid 43736766)
- (2006) Applied Physics Letters , vol.88 , Issue.19 , pp. 193502
- Cho, D.-Y.¹ Oh, S.-J.² Chang, Y.J.³ Noh, T.W.⁴ Jung, R.⁵ Lee, J.-C.⁶

5
- 62649140005
- 10.1149/1.3086266
- S.Van Elshocht, C. Adelmann, P. Lehnen, and S. De Gendt, Electrochem. Solid-State Lett. 12, G17 (2009). 10.1149/1.3086266
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 17
- Elshocht, S.V.¹ Adelmann, C.² Lehnen, P.³ De Gendt, S.⁴

6
- 19944375819
- 2/Si interface
- DOI 10.1016/j.mee.2005.04.097, PII S0167931705002364, 14th Biennial Conference on Insulating Films on Semiconductors
- J. L. Gavartin, L. Fonseca, G. Bersuker, and A. L Shluger, Microelectron. Eng. 80, 412 (2005). 10.1016/j.mee.2005.04.097 (Pubitemid 40753121)
- (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 412-415
- Gavartin, J.L.¹ Fonseca, L.² Bersuker, G.³ Shluger, A.L.⁴

7
- 79960494553
- L. Wu, K. S. Yew, D. S. Ang, W. J. Liu, T. T. Le, T. L. Duan, C. H. Hou, X. F. Yu, D. Y. Lee, K. Y Hsu, J. Xu, H. J. Tao, M. Cao, and H. Y. Yu, Tech. Dig. - Int. Electron Devices Meet. 2010, 273.
- (2010) Tech. Dig. - Int. Electron Devices Meet. , pp. 273
- Wu, L.¹ Yew, K.S.² Ang, D.S.³ Liu, W.J.⁴ Le, T.T.⁵ Duan, T.L.⁶ Hou, C.H.⁷ Yu, X.F.⁸ Lee, D.Y.⁹ Hsu, K.Y.¹⁰ Xu, J.¹¹ Tao, H.J.¹² Cao, M.¹³ Yu, H.Y.¹⁴

8
- 71049186129
- K. Kita and A. Toriumi, Tech. Dig. - Int. Electron Devices Meet. 2008, 29.
- (2008) Tech. Dig. - Int. Electron Devices Meet. , pp. 29
- Kita, K.¹ Toriumi, A.²

9
- 31044455312
- High dielectric constant gate oxides for metal oxide Si transistors
- DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
- J. Robertson, Rep. Prog. Phys. 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
- (2006) Reports on Progress in Physics , vol.69 , Issue.2 , pp. 327-396
- Robertson, J.¹

10
- 34547277537
- Oxygen vacancies in high dielectric constant oxide-semiconductor films
- DOI 10.1103/PhysRevLett.98.196101
- S. Guha and V. Narayanan, Phys. Rev. Lett. 98, 196101 (2007). 10.1103/PhysRevLett.98.196101 (Pubitemid 47139496)
- (2007) Physical Review Letters , vol.98 , Issue.19 , pp. 196101
- Guha, S.¹ Narayanan, V.²

11
- 33646866238
- E. Cartier, F. R. McFeely, V. Narayanan, P. Jamison, B. P. Linder, M. Copel, V. K. Paruchuri, V. S. Basker, R. Haight, D. Lim, R. Carruthers, T. Shaw, M. Steen, J. Sleight, J. Rubino, H. Deligianni, S. Guha, R. Jammy, G. Shahidi, Symp. VLSI Technol. 2005, 230.
- (2005) Symp. VLSI Technol. , pp. 230
- Cartier, E.¹ McFeely, F.R.² Narayanan, V.³ Jamison, P.⁴ Linder, B.P.⁵ Copel, M.⁶ Paruchuri, V.K.⁷ Basker, V.S.⁸ Haight, R.⁹ Lim, D.¹⁰ Carruthers, R.¹¹ Shaw, T.¹² Steen, M.¹³ Sleight, J.¹⁴ Rubino, J.¹⁵ Deligianni, H.¹⁶ Guha, S.¹⁷ Jammy, R.¹⁸ Shahidi, G.¹⁹

12
- 78449278247
- 10.1149/1.3494150
- Z. Q. Liu, S. Y. Chiam, W. K. Chim, J. S. Pan, and C. M. Ng, J. Electrochem. Soc. 157, G250 (2010). 10.1149/1.3494150
- (2010) J. Electrochem. Soc. , vol.157 , pp. 250
- Liu, Z.Q.¹ Chiam, S.Y.² Chim, W.K.³ Pan, J.S.⁴ Ng, C.M.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.