Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale nand flash

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1202-1204

  Miccoli, Carmine ^a,b   Monzio Compagnoni, Christian ^a,b   Amoroso, Salvatore Maria ^a,b   Spessot, Alessio ^c   Fantini, Paolo ^c   Visconti, Angelo ^c   Spinelli, Alessandro S ^a,d  

^a POLITECNICO DI MILANO   (Italy)

^b Italian University Nano Electronics Team IUNET   (Italy)

^c R and D Technology Development   (Italy)

^d IFN CNR   (Italy)

Author keywords

Data retention; electron emission statistics (EES); Flash memories; semiconductor device modeling; thresholdvoltage dispersion

Indexed keywords

CELL PARAMETER; DATA RETENTION; DISPERSION CONTRIBUTION; EMISSION STATISTICS; FLOATING GATES; MEMORY ARRAY; NAND FLASH; NAND FLASH MEMORY; NANO SCALE; QUANTITATIVE ASSESSMENTS; SEMICONDUCTOR DEVICE MODELING; VOLTAGE DISTRIBUTION; VOLTAGE LEVELS;

DISPERSIONS; ELECTRONS; FLASH MEMORY; NAND CIRCUITS; NANOSTRUCTURED MATERIALS; THRESHOLD VOLTAGE;

ELECTRON EMISSION;

EID: 77958614822     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2069082     Document Type: Article

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