Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in flash memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Mauri, A ^a   Castellani, N ^b   Compagnoni, C Monzio ^b   Ghetti, A ^a   Cappelletti, P ^a   Spinelli, A S ^b,c   Lacaita, A L ^b,c  

^a Micron   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DECA-NANOMETER; FLASH CELL; NANO SCALE; NANOSCALE DEVICE; NOISE FLUCTUATIONS; ORDERS-OF-MAGNITUDE; RANDOM TELEGRAPH NOISE; TIME CONSTANTS; TRAP PARAMETERS; TRAP SPECTROSCOPY;

DISSOCIATION; ELECTRON DEVICES; ELECTROSTATICS; FLASH MEMORY; NANOTECHNOLOGY;

THREE DIMENSIONAL;

EID: 84856986713     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131570     Document Type: Conference Paper

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