Charge gain, NBTI recovery and random telegraph noise in localized-trapping NVM devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Janai, Meir ^a   Bloom, Ilan ^a   Shur, Yael ^a  

^a Spansion Israel Ltd ^*  (Israel)

Author keywords

Charge Trapping storage; EEPROM; Flash MirrorBit; NBTI; NROM; NVM; RTN

Indexed keywords

CHARGE-TRAPPING STORAGE; EEPROM; FLASH MIRRORBIT; NBTI; NROM; NVM; RTN;

ELECTRIC FIELDS; MOS DEVICES; NITRIDES; NONVOLATILE STORAGE; PROM; RECOVERY; RELIABILITY; TELEGRAPH;

INTEGRATED CIRCUITS;

EID: 79959310696     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784585     Document Type: Conference Paper

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