Position-dependent threshold-voltage variation by random telegraph noise in NAND flash memory strings

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 635-637

  Joe, Sung Min ^a   Yi, Jeong Hyong ^b   Park, Sung Kye ^b   Kwon, Hyuck In ^b,c   Lee, Jong Ho ^d  

^a Kyungpook National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Chung Ang University   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

Floating gate; NAND Flash memory; position dependence; random telegraph noise (RTN); threshold voltage fluctuation; transconductance

Indexed keywords

FLOATING GATES; NAND FLASH MEMORY; POSITION DEPENDENCE; RANDOM TELEGRAPH NOISE; THRESHOLD-VOLTAGE FLUCTUATION; VOLTAGE FLUCTUATIONS;

NAND CIRCUITS; TELEGRAPH; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

FLASH MEMORY;

EID: 77954144808     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2047235     Document Type: Article

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