Variable stress-induced leakage current and analysis of anomalous charge loss for flash memory application

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 491-496

  Yamada, Ren Ichi ^a   King, Tsu Jae ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Anomalous cell; Anomalous SILC; Erratic; Fast bit; Flash memory; Moving bit; Random telegraphic noise; Retention time; SILC

Indexed keywords

ELECTRIC CHARGE; FLASH MEMORY; MOS CAPACITORS;

RETENTION TIME;

LEAKAGE CURRENTS;

EID: 0038648962     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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