Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Applied Surface Science

Volumn 282, Issue , 2013, Pages 390-395

  Zhang, Jian ^a   Yang, Hui ^a   Zhang, Qi Long ^a   Dong, Shurong ^a   Luo, J K ^a,b  

^a ZHEJIANG UNIVERSITY   (China)

^b UNIVERSITY OF BOLTON   (United Kingdom)

Author keywords

ALD; Plasma enhanced; Resistive switching; Thermal; ZnO

Indexed keywords

CONDUCTIVE FILMS; CRYSTAL ATOMIC STRUCTURE; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; RANDOM ACCESS STORAGE; SWITCHING; THICK FILM DEVICES; THIN FILMS; ZINC OXIDE;

OPTICAL AND ELECTRICAL PROPERTIES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING DEVICES; THERMAL; TRANSPARENT CONDUCTING FILMS;

ATOMIC LAYER DEPOSITION;

EID: 84880948769     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.05.141     Document Type: Article

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