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Journal of the Electrochemical Society

Volumn 159, Issue 3, 2012, Pages

High uniformity of resistive switching characteristics in a Cr/ZnO/Pt device

(6) Chang, Wen Yuan a Huang, Hsin Wei b Wang, Wei Ting b Hou, Cheng Hao b Chueh, Yu Lun b He, Jr Hau a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CR ELECTRODE; ELECTRODE-OXIDE INTERFACES; HIGH UNIFORMITY; OPERATION VOLTAGE; OXIDATION LAYERS; OXIDIZATION; OXYGEN IONS; OXYGEN RESERVOIR; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE STATE; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS;

OXYGEN; PLATINUM; ZINC OXIDE;

SWITCHING SYSTEMS;

EID: 84863115846 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.092203jes Document Type: Article

Times cited : (48)

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