High-performance programmable memory devices based on Co-doped BaTiO 3

Advanced Materials

Volumn 23, Issue 11, 2011, Pages 1351-1355

  Yan, Zhibo ^a,c   Guo, Yanyan ^a,c   Zhang, Guoquan ^a,c   Liu, J M ^a,b,c  

^a NANJING UNIVERSITY   (China)

^b SOUTH CHINA NORMAL UNIVERSITY   (China)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

ferroelectrics; memory devices; resistive random access memory

Indexed keywords

ACTIVE LAYER; CO IONS; CO-DOPED; CO-DOPING; CONDUCTIVE FILAMENTS; FERROELECTRICS; HIGH DENSITY; HIGH ELECTRIC FIELDS; ITINERANT ELECTRONS; MEMORY DEVICES; METAL-INSULATOR PHASE TRANSITION; NON-VOLATILE MEMORIES; PROGRAMMABLE MEMORY; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION TIME; SWITCHING SPEED;

BARIUM COMPOUNDS; DOPING (ADDITIVES); ELECTRIC FIELDS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; OXYGEN; OXYGEN VACANCIES; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

BARIUM DERIVATIVE; BARIUM TITANATE; COBALT; TITANIUM;

ARTICLE; CHEMISTRY; SEMICONDUCTOR;

BARIUM COMPOUNDS; COBALT; SEMICONDUCTORS; TITANIUM;

EID: 79952665471     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201004306     Document Type: Article

References (23)

1. K. Shibuya, R. Dittmann, S. Mi, R. Waser, Adv. Mater. 2010, 22, 411.
2. M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, B. P. Andreasson, Adv. Mater. 2007, 19, 2232.
3. A. Sawa, Mater. Today 2008, 11, 28.
4. R. Waser, M. Aono, Nature Mater. 2007, 6, 833.
5. J. P. Strachan, M. D. Pickett, J. J. Yang, S. Aloni, A. L. David Kilcoyne, G. Medeiros-Ribeiro, R. Stanley Williams, Adv. Mater. 2010, 22, 3573.
6. H. Takagi, H. Y. Hwang, Science 2010, 327, 1601.
7. J. Mannhart, D. G. Schlom, Science 2010, 327, 1607.
8. D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C. S. Hwang, Nature Nanotech. 2010, 5, 148.
9. T. Kolodiazhnyi, M. Tachibana, H. Kawaji, J. Hwang, E. Takayama-Muromachi, Phys. Rev. Lett. 2010, 104, 147602.
10. U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, IEEE Trans. Electr. Dev. 2009, 56, 193.
11. J. Velev, C.-G. Duan, K. Belashchenko, S. Jaswal, E. Tsymbal, Phys. Rev. Lett. 2007, 98, 137201.
12. S. J. Wang, M. O. Lai, L. Lu, J. Phys. D: Appl. Phys. 2010, 43, 305401.
13. Z. B. Yan, S. Z. Li, K. F. Wang, J.-M. Liu, Appl. Phys. Lett. 2010, 96, 012103.
14. J.-G. Park, W.-S. Nam, S.-H. Seo, Y.-G. Kim, Y.-H. Oh, G.-S. Lee, U.-G. Paik, Nano Lett. 2009, 9, 1713.
15. J. S. Choi, J. S. Kim, I. R. Hwang, S. H. Hong, S. H. Jeon, S. O. Kang, B. H. Park, D. C. Kim, M. J. Lee, S. Seo, Appl. Phys. Lett. 2009, 95, 022109.
16. S. Chang, J. Lee, S. Chae, S. Lee, C. Liu, B. Kahng, D. W. Kim, T. Noh, Phys. Rev. Lett. 2009, 102, 026801.
17. H. Shima, F. Takano, H. Akinaga, Y. Tamai, I. H. Inoue, H. Takagi, Appl. Phys. Lett. 2007, 91, 012901.
18. Q. Liu, S. Long, W. Wang, Q. Zuo, S. Zhang, J. Chen, M. Liu, IEEE Electron Dev. Lett. 2009, 30, 1335.
19. H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R. Han, J. Kang, B. Yu, Appl. Phys. Lett. 2010, 96, 123502.
20. R. Scharfschwerdt, A. Mazur, O. F. Schirmer, H. Hesse, S. Mendricks, Phys. Rev. B 1996, 54, 15284.
21. J. P. Boyeaux, F. M. Michel-Calendini, J. Phys. C: Solid State Phys. 1979, 12, 545.
22. J. J. Yang, J. P. Strachan, Q. Xia, D. A. A. Ohlberg, P. J. Kuekes, R. D. Kelley, W. F. Stickle, D. R. Stewart, G. Medeiros-Ribeiro, R. S. Williams, Adv. Mater. 2010, 22, 4034.
23. Y. Nian, J. Strozier, N. Wu, X. Chen, A. Ignatiev, Phys. Rev. Lett. 2007, 98, 146403.