Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Zhang, Jian ^a   Yang, Hui ^a   Zhang, Qi Long ^a   Dong, Shurong ^a   Luo, J K ^a,b  

^a ZHEJIANG UNIVERSITY   (China)

^b UNIVERSITY OF BOLTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; CONDUCTION MECHANISM; LOW-RESISTANCE STATE; LOW-TEMPERATURE GROWN; OHMIC BEHAVIOR; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SPACE CHARGE LIMITED CURRENTS; ZNO DEVICES; ZNO FILMS; ZNO THIN FILM;

DEPOSITS; SWITCHING SYSTEMS;

METALLIC FILMS;

EID: 84872352696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4774400     Document Type: Article

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