Cathodoluminescence study of crystalline quality of (Al, In, Ga)N heterostructures

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 245-250

  Liu, Q ^a   Lakner, H ^a   Meinert, A ^a   Scholz, F ^b   Sohmer, A ^b   Kubalek, E ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Cathodoluminescence; Group III nitrides; Scanning transmission electron microscopy; Secondary electron microscopy

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 0031374425     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00185-2     Document Type: Article

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