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Volumn 97, Issue 11, 2010, Pages

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

(10) Visalli, Domenica a,b Van Hove, Marleen b Srivastava, Puneet a,b Derluyn, Joff b Das, Johan b Leys, Maarten b Degroote, Stefan b Cheng, Kai b Germain, Marianne b Borghs, Gustaaf a,b

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; AVALANCHE BREAKDOWN; BREAKDOWN MECHANISM; BREAKDOWN VOLTAGE; ELECTRICAL MEASUREMENT; ELECTRON DENSITIES; FAILURE MECHANISM; GAN-BASED HETEROSTRUCTURES; GATE DRAIN; HIGH-VOLTAGES; SI SUBSTRATES; SILICON SUBSTRATES; SIMULATION STUDIES; SUBSTRATE STRUCTURE; TCAD SIMULATION;

CARRIER CONCENTRATION; CRYSTALS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; IMPACT IONIZATION; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77956826303 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3488024 Document Type: Article

Times cited : (68)

References (15)

1
- 77955174374
- ZZZZZZ 1610-1634. 10.1002/pssc.200880835
- D. Visalli, M. Van Hove, J. Derluyn, K. Cheng, S. Degroote, M. Leys, M. Germain, and G. Borghs, Phys. Status Solidi C ZZZZZZ 1610-1634 6, S988 (2009). 10.1002/pssc.200880835
- (2009) Phys. Status Solidi C , vol.6 , pp. 988
- Visalli, D.¹ Van Hove, M.² Derluyn, J.³ Cheng, K.⁴ Degroote, S.⁵ Leys, M.⁶ Germain, M.⁷ Borghs, G.⁸

2
- 77950069377
- JAPLD8 0021-4922. 10.1143/JJAP.48.04C101
- D. Visalli, M. Van Hove, J. Derluyn, S. Degroote, M. Leys, K. Cheng, M. Germain, and G. Borghs, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 48, 04C101 (2009). 10.1143/JJAP.48.04C101
- (2009) Jpn. J. Appl. Phys., Part 2 , vol.48
- Visalli, D.¹ Van Hove, M.² Derluyn, J.³ Degroote, S.⁴ Leys, M.⁵ Cheng, K.⁶ Germain, M.⁷ Borghs, G.⁸

3
- 67649342389
- EDLEDZ 0741-3106. 10.1109/LED.2009.2018288
- S. L. Selvaraj, T. Suzue, and T. Egawa, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 587 (2009). 10.1109/LED.2009.2018288
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 587
- Selvaraj, S.L.¹ Suzue, T.² Egawa, T.³

4
- 51549085821
- N. Ikeda, S. Kaya, J. Li, Y. Sato, S. Kato, and S. Yoshida, Proceedings of the IEEE 20th International Symposium Power Semiconductor Devices, 2008, pp. 287-290.
- (2008) Proceedings of the IEEE 20th International Symposium Power Semiconductor Devices , pp. 287-290
- Ikeda, N.¹ Kaya, S.² Li, J.³ Sato, Y.⁴ Kato, S.⁵ Yoshida, S.⁶

5
- 17944370096
- Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaNGaN high-electron-mobility transistors on 4 in. diameter silicon
- DOI 10.1063/1.1879091, 123503
- S. Arulkumaran, T. Egawa, S. Matsui, and H. Ishikawa, Appl. Phys. Lett. APPLAB 0003-6951 86, 123503 (2005). 10.1063/1.1879091 (Pubitemid 40596950)
- (2005) Applied Physics Letters , vol.86 , Issue.12 , pp. 1-3
- Arulkumaran, S.¹ Egawa, T.² Matsui, S.³ Ishikawa, H.⁴

6
- 34547850386
- 20mΩ, 750 v high-power AlGaN/GaN heterostructure field-effect transistors on Si substrate
- DOI 10.1143/JJAP.46.L587
- S. Iwakami, O. Machida, M. Yanagihara, T. Ehara, N. Kaneko, H. Goto, and A. Iwabuchi, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 46, L587 (2007). 10.1143/JJAP.46.L587 (Pubitemid 47245342)
- (2007) Japanese Journal of Applied Physics, Part 2: Letters , vol.46 , Issue.20-24
- Iwakami, S.¹ Machida, O.² Yanagihara, M.³ Ehara, T.⁴ Kaneko, N.⁵ Goto, H.⁶ Iwabuchi, A.⁷

7
- 34548410951
- Evaluation of AlGaN/GaN heterostructure field-effect transistors on Si substrate in power factor correction circuit
- DOI 10.1143/JJAP.46.L721
- S. Iwakami, O. Machida, Y. Izawa, R. Baba, M. Yanagihara, T. Ehara, N. Kaneko, H. Goto, and A. Iwabuchi, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 46, L721 (2007). 10.1143/JJAP.46.L721 (Pubitemid 47351548)
- (2007) Japanese Journal of Applied Physics, Part 2: Letters , vol.46 , Issue.29-32
- Iwakami, S.¹ Machida, O.² Izawa, Y.³ Baba, R.⁴ Yanagihara, M.⁵ Ehara, T.⁶ Kaneko, N.⁷ Goto, H.⁸ Iwabuchi, A.⁹

8
- 77955175521
- EDLEDZ 0741-3106. 10.1109/LED.2010.2050673
- P. Srivastava, J. Das, D. Visalli, J. Derluyn, M. Van Hove, P. Malinowski, D. Marcon, K. Geens, K. Cheng, S. Degroote, M. Leys, M. Germain, S. Decoutere, R. P. Mertens, and G. Borghs, IEEE Electron Device Lett. EDLEDZ 0741-3106 31, 851 (2010). 10.1109/LED.2010.2050673
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 851
- Srivastava, P.¹ Das, J.² Visalli, D.³ Derluyn, J.⁴ Van Hove, M.⁵ Malinowski, P.⁶ Marcon, D.⁷ Geens, K.⁸ Cheng, K.⁹ Degroote, S.¹⁰ Leys, M.¹¹ Germain, M.¹² Decoutere, S.¹³ Mertens, R.P.¹⁴ Borghs, G.¹⁵

9
- 77956806047
- B. Lu, E. L. Piner, and T. Palacios, Proceedings of the Device Research Conference, 2010.
- (2010) Proceedings of the Device Research Conference
- Lu, B.¹ Piner, E.L.² Palacios, T.³

10
- 72949122504
- ZZZZZZ 1610-1634. 10.1002/pssc.200778518
- K. Cheng, M. Leys, J. Derluyn, K. Balachander, S. Degroote, M. Germain, and G. Borghs, Phys. Status Solidi C ZZZZZZ 1610-1634 5, 1600 (2008). 10.1002/pssc.200778518
- (2008) Phys. Status Solidi C , vol.5 , pp. 1600
- Cheng, K.¹ Leys, M.² Derluyn, J.³ Balachander, K.⁴ Degroote, S.⁵ Germain, M.⁶ Borghs, G.⁷

11
- 25144487113
- 4 surface layer
- DOI 10.1063/1.2008388, 054501
- J. Derluyn, S. Boeykens, K. Cheng, R. Vandersmissen, J. Das, W. Ruythooren, S. Degroote, M. R. Leys, M. Germain, and G. Borghs, J. Appl. Phys. JAPIAU 0021-8979 98, 054501 (2005). 10.1063/1.2008388 (Pubitemid 41345124)
- (2005) Journal of Applied Physics , vol.98 , Issue.5 , pp. 1-5
- Derluyn, J.¹ Boeykens, S.² Cheng, K.³ Vandersmissen, R.⁴ Das, J.⁵ Ruythooren, W.⁶ Degroote, S.⁷ Leys, M.R.⁸ Germain, M.⁹ Borghs, G.¹⁰

12
- 37149024132
- C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance
- DOI 10.1116/1.2794058
- Y. C. Choi, J. Shi, M. Pophristic, M. G. Spencer, and L. F. Eastman, J. Vac. Sci. Technol. B JVTBD9 1071-1023 25, 1836 (2007). 10.1116/1.2794058 (Pubitemid 350255802)
- (2007) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.25 , Issue.6 , pp. 1836-1841
- Choi, Y.C.¹ Shi, J.² Pophristic, M.³ Spencer, M.G.⁴ Eastman, L.F.⁵

13
- 77950980025
- Sentaurus TCAD manual.
- Sentaurus TCAD Manual

14
- 0033314799
- Experimental evaluation of impact ionization coefficients in GaN
- DOI 10.1109/55.806100
- K. Kunihiro, K. Kasahara, Y. Takahashi, and Y. Ohno, IEEE Electron Device Lett. EDLEDZ 0741-3106 20, 608 (1999). 10.1109/55.806100 (Pubitemid 30531495)
- (1999) IEEE Electron Device Letters , vol.20 , Issue.12 , pp. 608-610
- Kunihiro, K.¹ Kasahara, K.² Takahashi, Y.³ Ohno, Y.⁴

15
- 0001590229
- JAPIAU 0021-8979. 10.1063/1.369664
- O. Ambacher, J. Smart, J. R. Shealy, N. G. Welmann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastmann, J. Appl. Phys. JAPIAU 0021-8979 85, 3222 (1999). 10.1063/1.369664
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Welmann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Schaff, W.J.⁷ Eastmann, L.F.⁸

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