Efficient wet etching of GaN (0001) substrate with subsurface damage layer

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 4, 2011, Pages 2979-2982

  Sadakuni, Shun ^a   Murata, Junji ^a   Yagi, Keita ^b   Sano, Yasuhisa ^a   Okamoto, Takeshi ^a   Kenta, Arima ^a   Hattori, Azusa N ^a   Yamauchi, Kazuto ^a  

^a OSAKA UNIVERSITY   (Japan)

^b EBARA CORPORATION   (Japan)

Author keywords

Bias; Gallium nitride; PEC etching; Photoenhanced chemical etching; Polishing

Indexed keywords

BIAS; CHEMICAL ETCHING; CRYSTALLOGRAPHIC DEFECTS; HIGH REMOVAL RATES; PHOTOGENERATED HOLES; RECOMBINATION PROCESS; SUBMICROMETER PARTICLE; SURFACE OXIDATIONS;

GALLIUM NITRIDE; OXIDATION; POLISHING; WET ETCHING;

CHEMICAL POLISHING;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; CONFORMATION; LIGHT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; RADIATION DOSE; RADIATION EXPOSURE; SURFACE PROPERTY; ULTRASTRUCTURE;

GALLIUM; LIGHT; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; PHOTOCHEMISTRY; RADIATION DOSAGE; SURFACE PROPERTIES;

EID: 80051952355     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2011.3897     Document Type: Article

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