Growth of GaN crystals by Na flux LPE method

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1283-1286

  Mori, Y ^a   Kitaoka, Y ^a   Imade, M ^a   Kawamura, F ^a   Miyoshi, N ^a   Yoshimura, M ^a   Sasaki, T ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Doping; GaN; Growth from solution; Nucleation

Indexed keywords

BULK CRYSTALS; CARBON DOPING; DOPING; ELECTRICAL DEVICES; FLUX METHODS; FORCED INDUCTION; GAN CRYSTALS; GAN GROWTH; GROUP III NITRIDES; GROWTH OF GAN; HIGH QUALITY; SOLUTION CONDITIONS; SOLUTION FLOWS;

CRYSTALS; GALLIUM NITRIDE; NUCLEATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SODIUM;

GALLIUM ALLOYS;

EID: 77954277201     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983482     Document Type: Article

References (26)

1. A. Usui, T. Ichihashi, K. Kobayashi, H. Sunakawa, Y. Oshima, T. Eri, and M. Shibata, Phys. Status Solidi A 194, 572 (2002).
2. S. Bohyama, K. Yoshikawa, H. Naoi, H. Miyake, K. Hiramatsu, Y. Iyechika, and T. Maeda, Phys. Status Solidi A 194, 528 (2002).
3. K. Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Y. Kumagai, A. Koukitu, and H. Seki, J. Cryst. Growth 237-239, 912 (2002).
4. A. Yoshikawa, E. Ohshima, T. Fukuda, H. Tsuji, and K. Oshima, J. Cryst. Growth 260, 67 (2004).
5. T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, Nature Mater. 6, 568 (2007).
6. R. Dwillinski, R. Dradzinski, J. Grarczynski, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi, J. Cryst. Growth 311, 3015 (2009).
7. J. Karpinski, J. Jun, and S. Porowski, J. Cryst. Growth 66, 1 (1984).
8. S. Porowski and I. Grzegory, J. Cryst. Growth 178, 174 (1997).
9. M. Bockowski, P. Strak, P. Kempisty, I. Grzegory, S. Krukowski, B. Lucznik, and S. Porowski, J. Cryst. Growth 307, 259 (2007).
10. H. Yamane, M. Shimada, T. Sekiguchi, and F. J. Disalvo, Chem. Mater. 9, 413 (1997).
11. M. Aoki, H. Yamane, M. Shimada, S. Sarayama, H. Iwata, and F. J. Disalvo, Jpn. J. Appl. Phys. 42, 5445 (2003).
12. F. Kawamura, M. Morishita, T. Iwahashi, M. Yoshimura, Y. Mori, and T. Sasaki, Jpn. J. Appl. Phys. 41, L1440 (2002).
13. M. Morishita, F. Kawamura, T. Iwahashi, M. Yoshimura, Y. Mori, and T. Sasaki, Jpn. J. Appl. Phys. 42, L565 (2003).
14. F. Kawamura, T. Iwahashi, K. Omae, M. Morishita, M. Yoshimura, Y. Mori, and T. Sasaki, Jpn. J. Appl. Phys. 42, L4 (2003).
15. F. Kawamura, T. Iwahashi, M. Morishita, K. Omae, M. Yoshimura, Y. Mori, and T. Sasaki, Jpn. J. Appl. Phys. 42, L729 (2003).
16. F. Kawamura, M. Morishita, K. Omae, M. Yoshimura, Y. Mori, and T. Sasaki, Jpn. J. Appl. Phys. 42, L879 (2003).
17. T. Iwahashi, F. Kawamura, M. Morishita, Y. Kai, M. Yoshimura, Y. Mori, and T. Sasaki, J. Cryst. Growth 253, 1 (2003).
18. T. Yamadaand and H. Yamane, Jpn. J. Appl. Phys. 45, L898 (2006).
19. F. Kawamura, H. Umeda, M. Kawahara, M. Yoshimura, Y. Mori, T. Sasaki, H. Okado, K. Arakawa, and H. Mori, Jpn. J. Appl. Phys. 45, 2528 (2006).
20. F. Kawamura, H. Umeda, M. Morishita, M. Kawahara, M. Yoshimura, Y. Mori, T. Sasaki, and Y. Kitaoka, Jpn. J. Appl. Phys. 45, L1136 (2006).
21. R. Gejo, F. Kawamura, M. Kawahara, M. Yoshimura, Y. Kitaoka, Y. Mori, and T. Sasaki, Jpn. J. Appl. Phys. 46, 7689 (2007).
22. M. Kawahara, F. Kawamura, M. Yoshimura, Y. Mori, T. Sasaki, S. Yanagisawa, and Y. Morikawa, J. Cryst. Growth 303, 34 (2007).
23. D. Kashiwagi, R. Gejo, Y. Kangawa, L. Liu, F. Kawamura, Y. Mori, T. Sasaki, and K. Kakimoto, J. Cryst. Growth 310, 1790 (2008).
24. F. Kawamura, M. Morishita, M. Tampo, M. Imade, M. Yoshimura, Y. Kitaoka, Y. Mori, and T. Sasaki, J. Cryst. Growth 310, 3946 (2008).
25. F. Kawamura, M. Tampo, N. Miyoshi, M. Imade, M. Yoshimura, Y. Mori, Y. Kitaoka, and T. Sasaki, J. Cryst. Growth 311, 3019 (2009).
26. T. Sasaki, Y. Mori, F. Kawamura, M. Yoshimura, and Y. Kitaoka, J. Cryst. Growth 310, 1228 (2008).