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Volumn 3, Issue , 2006, Pages 1897-1901
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Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
NONRADIATIVE RECOMBINATION CENTERS;
PHOTOLUMINESCENCE SPECTROSCOPY;
ROOM TEMPERATURE;
THREADING DISLOCATIONS;
68.37.PS;
68.37.UV;
78.55.CR;
78.67.DE;
EPITAXIALLY LATERALLY OVERGROWN;
NEAR-FIELD PHOTOLUMINESCENCE;
SINGLE-QUANTUM-WELL STRUCTURES;
COMPOSITION;
DISLOCATIONS (CRYSTALS);
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM COMPOUNDS;
ATOMIC FORCE MICROSCOPY;
PHOTOLUMINESCENCE SPECTROSCOPY;
SEMICONDUCTOR QUANTUM WELLS;
SCREW DISLOCATIONS;
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EID: 33746331382
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200565403 Document Type: Conference Paper |
Times cited : (15)
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References (11)
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