Realization of nitride-based solar cell on freestanding GaN substrate

Applied Physics Express

Volumn 3, Issue 11, 2010, Pages

  Kuwahara, Yosuke ^a   Fujii, Takahiro ^a   Fujiyama, Yasuharu ^a   Sugiyama, Tohru ^a   Iwaya, Motoaki ^a   Takeuchi, Tetsuya ^a   Kamiyama, Satoshi ^a   Akasaki, Isamu ^a   Amano, Hiroshi ^b  

^a MEIJO UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; FILL FACTOR; FREESTANDING GAN SUBSTRATES; GAN SUBSTRATE; LOW TEMPERATURES; P-TYPE GAN; PIT DENSITY; SAPPHIRE SUBSTRATES; SHUNT RESISTANCES; SOLAR SIMULATOR;

CONVERSION EFFICIENCY; GALLIUM NITRIDE; OPEN CIRCUIT VOLTAGE; SAPPHIRE; SOLAR CELLS; SUBSTRATES; SWITCHING CIRCUITS;

GALLIUM ALLOYS;

EID: 78549260342     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.111001     Document Type: Article

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