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Journal of Materials Science: Materials in Electronics

Volumn 23, Issue 2, 2012, Pages 408-412

Power and gas pressure effects on properties of amorphous In-Ga-ZnO films by magnetron sputtering

(4) Li, Yuanjie a Hu, Xiaofen a Liu, Zilong a Ren, Jiangbo a

a XI'AN JIAOTONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; ELECTRICAL CONDUCTIVITY; FILM DEPOSITION RATES; GAS-FLOW RATIO; IN-VACUUM; OXYGEN FLOW RATES; POSTGROWTH ANNEALING; QUARTZ GLASS SUBSTRATES; RADIO FREQUENCY MAGNETRON SPUTTERING; ROOM TEMPERATURE; SEMI-INSULATING; SPUTTERING POWER; VISIBLE WAVELENGTHS;

ANNEALING; ELECTRIC CONDUCTIVITY; FLOW RATE; INDIUM; METALLIC FILMS; OXYGEN; PRESSURE EFFECTS; QUARTZ; SEMICONDUCTING FILMS; SUBSTRATES;

GALLIUM;

EID: 84856698399 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0467-x Document Type: Article

Times cited : (18)

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