A study on H 2 plasma treatment effect on a-IGZO thin film transistor

Journal of Materials Research

Volumn 27, Issue 17, 2012, Pages 2318-2325

  Kim, Jihoon ^a   Bang, Seokhwan ^a   Lee, Seungjun ^a   Shin, Seokyoon ^a   Park, Joohyun ^a   Seo, Hyungtak ^b   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); DEVICE STABILITY; ELECTRICAL CHARACTERISTIC; H2 PLASMA; HYDROGEN ATOMS; HYDROGEN CONTENTS; IN-CHANNELS; OXYGEN DEFICIENCY; PLASMA TREATMENT; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); TRAP CHARGE; TREATMENT TIME; VOLTAGE SHIFT;

ACTIVATION ENERGY; ARRHENIUS PLOTS; HYDROGEN; OXYGEN VACANCIES; PLASMA STABILITY; THIN FILM TRANSISTORS;

PLASMA APPLICATIONS;

EID: 84865460257     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2012.199     Document Type: Article

References (24)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono: Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488 (2004).
2. R. Hayashi, A. Sato, M. Ofuji, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono: Invited paper: Improved amorphous in-Ga-Zn-O TFTs. SID Int. Symp. Dig. Tech. 39, 621 (2008).
3. E.V. Monakhov, J.S. Christensen, K. Maknys, B.G. Svensson, and A.Y. Kuznetsov: Hydrogen implantation into ZnO for n(1)-layer formation. Appl. Phys. Lett. 87, 191910 (2005).
4. M. Kumar, R. Chatterjee, S.Milikisiyants,A.Kanjilal, M. Voelskow, D. Grambole, K.V. Lakshmi, and J.P. Singh: Investigating the role of hydrogen in indium oxide tubular nanostructures as a donor or oxygen vacancy passivation center. Appl. Phys. Lett. 95, 013102 (2009).
5. S.W. Tsao, T.C. Chang, S.Y. Huang, M.C. Chen, S.C. Chen, C.T. Tsai, Y.J. Kuo, Y.C. Chen, and W.C. Wu: Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid State Electron. 54, 1497 (2010).
6. J.H. Jeong, H.W. Yang, J.S. Park, J.K. Jeong, Y.G. Mo, H.D. Kim, J. Song, and C.S.Hwang: Origin of subthreshold swing improvement in amorphous indium gallium zinc oxide transistors. Electrochem. Solid-State Lett. 11, H157 (2008).
7. T. Kamiya, K. Nomura, and H. Hosono: Present status of amorphous In-Ga-Zn-O thin-film transistors. Sci. Technol. Adv. Mater. 11, 044305 (2010).
8. K. Hoshino, D. Hong, H.Q. Chiang, and J.F. Wager: Constantvoltage-bias stress testing of a-IGZO thin-film transistors. IEEE Trans. Electron Devices 56, 1365 (2009).
9. P.G. Lecomber and W.E. Spear: Electronic transport in amorphous silicon films. Phys. Rev. Lett. 25, 509 (1970).
10. Y.M. Kim, K.S. Jeong, H.J. Yun, S.D. Yang, S.Y. Lee, H.D. Lee, and G.W. Lee: Anomalous stress-induced hump effects in amorphous indium gallium zinc oxide TFTs. Trans. Electr. Electron. Mater. 13, 47 (2012).
11. S.H.K. Park, C.S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J.I. Lee, K. Lee, M.S. Oh, and S. Im: Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-lightemitting-diode display panel. Adv. Mater. 21, 678 (2009).
12. C.F. Huang, C.Y. Peng, Y.J. Yang, H.C. Sun, H.C. Chang, P.S. Kuo, H.L. Chang, C.Z. Liu, and C.W. Liu: Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors. IEEE Electron Device Lett. 29, 1332 (2008).
13. Y.J. Chung, J.H. Kim, U.K. Kim,M. Ryu, S.Y. Lee, and C.S. Hwang: Study on the existence of abnormal hysteresis in Hf-In-Zn-O thin film transistors under illumination. Electrochem. Solid-State Lett. 14, H300 (2011).
14. G.H. Kim, H.S. Kim, H.S. Shin, B.D. Ahn, K.H. Kim, and H.J. Kim: Inkjet-printed InGaZnO thin film transistor. Thin Solid Films 517, 4007 (2009).
15. J.R. Bellingham, A.P. Mackenzie, and W.A. Phillips: Precise measurements of oxygen-content-oxygen vacancies in transparent conducting indium oxide-films. Appl. Phys. Lett. 58, 2506 (1991).
16. K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono: Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O(2) annealing. Appl. Phys. Lett. 93, 192107 (2008).
17. T. Kamiya, K. Nomura, and H. Hosono: Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping. IEEE/OSA J. Disp. Technol. 5, 273 (2009).
18. H. Seo, C.J. Park, Y.J. Cho, Y.B. Kim, and D.K. Choi: Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films. Appl. Phys. Lett. 96, 232101 (2010).
19. C.C. Lin, H.P. Chen, H.C. Liao, and S.Y. Chen: Enhanced luminescent and electrical properties of hydrogen-plasma ZnO nanorods grown on wafer-scale flexible substrates. Appl. Phys. Lett. 86, 183103 (2005).
20. T. Kamiya, K. Nomura, and H. Hosono: Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO(4) studied by density functional theory. Phys. Status Solidi A 207, 1698 (2010).
21. K.H. Ji, J.I. Kim, H.Y. Jung, S.Y. Park, Y.G. Mo, J.H. Jeong, J.Y. Kwon, M.K. Ryu, S.Y. Lee, R. Choi, and J.K. Jeong: The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors. J. Electrochem. Soc. 157, H983 (2010).
22. J. Jeong, J.K. Jeong, J.S. Park, Y.G. Mo, and Y. Hong: Meyer-Neldel rule and extraction of density of states in amorphous indiumgallium-zinc-oxide thin-film transistor by considering surface band bending. Jpn. J. Appl. Phys. 49, 03CB02 (2010).
23. H.C. Slade, M.S. Shur, S.C. Deane, and M. Hack: Below threshold conduction in a-Si:H thin film transistors with and without a silicon nitride passivating layer. Appl. Phys. Lett. 69, 2560 (1996).
24. L. Pichon, A. Mercha, R. Carin, O. Bonnaud, T. Mohammed-Brahim, Y. Helen, and R. Rogel: Analysis of the activation energy of the subthreshold current in laser-and solid-phase-crystallized polycrystalline silicon thin-film transistors. Appl. Phys. Lett. 77, 576 (2000).