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Volumn 517, Issue 14, 2009, Pages 4078-4081
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Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications
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Author keywords
a IGZO; Oxide TFTs; Transparent amorphous oxide semiconductor
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Indexed keywords
A-IGZO;
CHANNEL LAYERS;
ELECTRICAL AND OPTICAL PROPERTIES;
GAS FLOWS;
INDIUM GALLIUM ZINC OXIDES;
ON/OFF RATIOS;
OPTICAL TRANSMITTANCES;
RADIO FREQUENCY MAGNETRON SPUTTERING;
ROOM TEMPERATURES;
TRANSPARENT AMORPHOUS OXIDE SEMICONDUCTOR;
VISIBLE WAVELENGTHS;
AERODYNAMICS;
AMORPHOUS FILMS;
ARGON;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
ELECTRIC CONDUCTIVITY;
FLOW OF GASES;
MAGNETRON SPUTTERING;
OPTICAL PROPERTIES;
OXIDE FILMS;
SEMICONDUCTOR MATERIALS;
THIN FILM TRANSISTORS;
THIN FILMS;
ZINC;
ZINC OXIDE;
OPTICAL FILMS;
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EID: 65449141259
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.01.166 Document Type: Article |
Times cited : (41)
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References (17)
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