Stable high conductive amorphous InGaZnO driven by hydrogenation using hot isostatic pressing

Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

  Kim, Won Kyung ^a   Lee, Seunghun ^a   Cho, Yong Chan ^a   Koinuma, Hideomi ^a   Jeong, Se Young ^a   Shin, Jong Moon ^a   Cho, Chae Ryong ^a   Bae, Jong Seong ^b   Kim, Tae Young ^c   Park, Sungkyun ^a  

^a Pusan National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; HIGH ELECTRICAL CONDUCTIVITY; HYDROGEN INJECTION; OXYGEN ANNEALING;

ELECTRIC CONDUCTIVITY; HYDROGEN; HYDROGENATION; OXYGEN; SINTERING;

HOT ISOSTATIC PRESSING;

EID: 79953843379     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3567635     Document Type: Article

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