Effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films: Identification of hydrogen donors in ZnO

ACS Applied Materials and Interfaces

Volumn 2, Issue 6, 2010, Pages 1780-1784

  Dong, J J ^a   Zhang, X W ^a   You, J B ^a,b   Cai, P F ^a   Yin, Z G ^a   An, Q ^a   Ma, X B ^b   Jin, P ^a   Wang, Z G ^a   Chu, Paul K ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

hydrogen plasma treatment; photoluminescence; Raman spectroscopy; zinc oxide

Indexed keywords

ANNEALING TEMPERATURES; ELECTRICAL AND OPTICAL PROPERTIES; FREE CARRIERS; H-RELATED DEFECTS; HALL MEASUREMENTS; HYDROGEN DONOR; HYDROGEN PASSIVATES; HYDROGEN PLASMA TREATMENT; HYDROGEN PLASMA TREATMENTS; HYDROGEN-RELATED DONORS; INTERSTITIAL HYDROGEN; PHOTOELECTRONIC PROPERTIES; PLASMA TREATMENT; POTENTIAL APPLICATIONS; RAMAN PEAK; WURTZITES; ZNO; ZNO FILMS;

DEFECTS; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; HYDROGEN; METALLIC FILMS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; PLASMAS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; VOLTAGE DIVIDERS; ZINC; ZINC OXIDE; ZINC SULFIDE;

OPTICAL FILMS;

EID: 79151478507     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am100298p     Document Type: Article

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