|
Volumn 16, Issue 2, 2013, Pages 369-373
|
Effects of vapor-annealed gate dielectric on the properties of zinc tin oxide transparent thin film transistors
|
Author keywords
Hydrogen; Mobility; Transparent thin film transistors; Zinc tin oxide
|
Indexed keywords
BOTTOM GATE;
HYDROGEN PASSIVATION;
OXIDIZED SI WAFERS;
TRANSPARENT THIN FILM TRANSISTOR;
WATER VAPOR ATMOSPHERE;
ZINC TIN OXIDE;
ZINC-TIN-OXIDE (ZTO);
ALUMINUM COATINGS;
AMORPHOUS FILMS;
ANNEALING;
CARRIER MOBILITY;
GATE DIELECTRICS;
HYDROGEN;
SILICON WAFERS;
THIN FILM TRANSISTORS;
THIN FILMS;
TIN;
TIN OXIDES;
VAPOR DEPOSITION;
ZINC;
VAPORS;
|
EID: 84875220522
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2012.09.009 Document Type: Article |
Times cited : (7)
|
References (27)
|