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Volumn 16, Issue 2, 2013, Pages 369-373

Effects of vapor-annealed gate dielectric on the properties of zinc tin oxide transparent thin film transistors

Author keywords

Hydrogen; Mobility; Transparent thin film transistors; Zinc tin oxide

Indexed keywords

BOTTOM GATE; HYDROGEN PASSIVATION; OXIDIZED SI WAFERS; TRANSPARENT THIN FILM TRANSISTOR; WATER VAPOR ATMOSPHERE; ZINC TIN OXIDE; ZINC-TIN-OXIDE (ZTO);

EID: 84875220522     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.09.009     Document Type: Article
Times cited : (7)

References (27)
  • 2
    • 0038136910 scopus 로고    scopus 로고
    • J.F. Wager Science 300 2003 1245 1246
    • (2003) Science , vol.300 , pp. 1245-1246
    • Wager, J.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.