Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Ide, Keisuke ^a   Nomura, Kenji ^a   Hiramatsu, Hidenori ^a   Kamiya, Toshio ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS METALS; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); BACKPLANES; CHEMICAL COMPOSITIONS; CLASSICAL MOLECULAR DYNAMICS; CRYSTALLINE VOLUME FRACTION; CRYSTALLIZATION TEMPERATURE; DEPOSITION METHODS; DEVICE CHARACTERISTICS; FILM DENSITY; HIGH-TEMPERATURE IN SITU; IN-GA-ZN-O; INTERFERENCE ANALYSIS; INVESTIGATE EFFECTS; LOW TEMPERATURES; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL-ANNEALING; TWO-TEMPERATURE; X RAY REFLECTIVITY;

GALLIUM; MOLECULAR DYNAMICS; OPTICAL PROPERTIES; SPECTROSCOPIC ELLIPSOMETRY; STRUCTURAL RELAXATION; X RAY DIFFRACTION; ZINC;

GLASS TRANSITION;

EID: 84861742428     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3699372     Document Type: Conference Paper

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