SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

(5) Shuai, Yao a Zhou, Shengqiang a,b Brger, Danilo a Helm, Manfred a Schmidt, Heidemarie a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

b PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DE-TRAPPING; DEPLETION-LAYER THICKNESS; EXTERNAL VOLTAGES; FIELD-INDUCED CARRIERS; NON-VOLATILE; ORDERS OF MAGNITUDE; QUASI-OHMIC; RESISTANCE RATIO; RESISTANCE STATE; RESISTIVE SWITCHING; SCHOTTKY CONTACTS;

ELECTRIC FIELDS; ELECTROFORMING; OHMIC CONTACTS; SWITCHING SYSTEMS;

PLATINUM;

EID: 79960185107 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3601113 Document Type: Article

Times cited : (127)

References (23)

1
- 0002591559
- Electroforming and switching in oxides of transition metals: The role of metal-insulator transition in the switching mechanism
- DOI 10.1006/jssc.1996.0087
- F. A. Chudnovskii, L. L. Odynets, A. L. Pergament, and G. B. Stefanovich, J. Solid State Chem. 122, 95 (1996). 10.1006/jssc.1996.0087 (Pubitemid 126315782)
- (1996) Journal of Solid State Chemistry , vol.122 , Issue.1 , pp. 95-99
- Chudnovskii, F.A.¹ Odynets, L.L.² Pergament, A.L.³ Stefanovich, G.B.⁴

2
- 11944255355
- Quantized conductance atomic switch
- DOI 10.1038/nature03190
- K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono, Nature 433, 47 (2005). 10.1038/nature03190 (Pubitemid 40101138)
- (2005) Nature , vol.433 , Issue.7021 , pp. 47-50
- Terabe, K.¹ Hasegawa, T.² Nakayama, T.³ Aono, M.⁴

3
- 23944447615
- 2 thin films grown by atomic-layer deposition
- DOI 10.1063/1.2001146, 033715
- B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
- (2005) Journal of Applied Physics , vol.98 , Issue.3 , pp. 1-10
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Rohde, C.⁴ Choi, S.⁵ Oh, J.H.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

4
- 33745038459
- Interface resistance switching at a few nanometer thick perovskite manganite active layers
- DOI 10.1063/1.2211147
- A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 88, 232112 (2006). 10.1063/1.2211147 (Pubitemid 43877735)
- (2006) Applied Physics Letters , vol.88 , Issue.23 , pp. 232112
- Sawa, A.¹ Fujii, T.² Kawasaki, M.³ Tokura, Y.⁴

5
- 19744383252
- Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3
- DOI 10.1063/1.1845598, 012107
- T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005). 10.1063/1.1845598 (Pubitemid 40211571)
- (2005) Applied Physics Letters , vol.86 , Issue.1 , pp. 0121071-0121073
- Fujii, T.¹ Kawasaki, M.² Sawa, A.³ Akoh, H.⁴ Kawazoe, Y.⁵ Tokura, Y.⁶

6
- 0037436499
- 3 multiferroic thin film heterostructures
- DOI 10.1126/science.1080615
- J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003). 10.1126/science. 1080615 (Pubitemid 36337195)
- (2003) Science , vol.299 , Issue.5613 , pp. 1719-1722
- Wang, J.¹ Neaton, J.B.² Zheng, H.³ Nagarajan, V.⁴ Ogale, S.B.⁵ Liu, B.⁶ Viehland, D.⁷ Vaithyanathan, V.⁸ Schlom, D.G.⁹ Waghmare, U.V.¹⁰ Spaldin, N.A.¹¹ Rabe, K.M.¹² Wuttig, M.¹³ Ramesh, R.¹⁴

7
- 33750077021
- 3 films at room temperature
- DOI 10.1038/nmat1731, PII NMAT1731
- T. Zhao, A. Scholl, F. Zavaliche, K. Lee, M. Barry, A. Doran, M. P. Cruz, Y. H. Chu, C. Ederer, N. A. Spaldin, R. R. Das, D. M. Kim, S. H. Baek, C. B. Eom, and R. Ramesh, Nature Mater. 5, 823 (2006). 10.1038/nmat1731 (Pubitemid 44574358)
- (2006) Nature Materials , vol.5 , Issue.10 , pp. 823-829
- Zhao, T.¹ Scholl, A.² Zavaliche, F.³ Lee, K.⁴ Barry, M.⁵ Doran, A.⁶ Cruz, M.P.⁷ Chu, Y.H.⁸ Ederer, C.⁹ Spaldin, N.A.¹⁰ Das, R.R.¹¹ Kim, D.M.¹² Baek, S.H.¹³ Eom, C.B.¹⁴ Ramesh, R.¹⁵

8
- 44649193324
- 10.1103/PhysRevLett.100.227602
- D. Lebeugle, D. Colson, A. Forget, M. Viret, A. M. Bataille, and A. Gukasov, Phys. Rev. Lett. 100, 227602 (2008). 10.1103/PhysRevLett.100.227602
- (2008) Phys. Rev. Lett. , vol.100 , pp. 227602
- Lebeugle, D.¹ Colson, D.² Forget, A.³ Viret, M.⁴ Bataille, A.M.⁵ Gukasov, A.⁶

9
- 71049177090
- 10.1063/1.3247893
- J. Allibe, I. C. Infante, S. Fusil, K. Bouzehouane, E. Jacquet, C. Deranlot, M. Bibes, and A. Barthélémy, Appl. Phys. Lett. 95, 182503 (2009). 10.1063/1.3247893
- (2009) Appl. Phys. Lett. , vol.95 , pp. 182503
- Allibe, J.¹ Infante, I.C.² Fusil, S.³ Bouzehouane, K.⁴ Jacquet, E.⁵ Deranlot, C.⁶ Bibes, M.⁷ Barthélémy, A.⁸

10
- 77955725082
- 10.1063/1.3467838
- K. Yin, M. Li, Y. Liu, C. He, F. Zhuge, B. Chen, W. Lu, X. Pan, and R. Li, Appl. Phys. Lett. 97, 042101 (2010). 10.1063/1.3467838
- (2010) Appl. Phys. Lett. , vol.97 , pp. 042101
- Yin, K.¹ Li, M.² Liu, Y.³ He, C.⁴ Zhuge, F.⁵ Chen, B.⁶ Lu, W.⁷ Pan, X.⁸ Li, R.⁹

11
- 77958581512
- 10.1088/0957-4484/21/42/425202
- M. Li, F. Zhuge, X. Zhu, K. Yin, J. Wang, Y. Liu, C. He, B. Chen, and R. Li, Nanotechnology 21, 425202 (2010). 10.1088/0957-4484/21/42/425202
- (2010) Nanotechnology , vol.21 , pp. 425202
- Li, M.¹ Zhuge, F.² Zhu, X.³ Yin, K.⁴ Wang, J.⁵ Liu, Y.⁶ He, C.⁷ Chen, B.⁸ Li, R.⁹

12
- 79959359101
- 10.1007/s00339-010-5910-y
- X. Chen, G. Wu, H. Zhang, N. Qin, T. Wang, F. Wang, W. Shi, and D. Bao, Appl. Phys. A. 100, 987 (2010). 10.1007/s00339-010-5910-y
- (2010) Appl. Phys. A. , vol.100 , pp. 987
- Chen, X.¹ Wu, G.² Zhang, H.³ Qin, N.⁴ Wang, T.⁵ Wang, F.⁶ Shi, W.⁷ Bao, D.⁸

13
- 78449303523
- 10.1002/adma.201001872
- R. Muenstermann, T. Menke, R. Dittmann, and R. Waser, Adv. Mater. 22, 4819 (2010). 10.1002/adma.201001872
- (2010) Adv. Mater. , vol.22 , pp. 4819
- Muenstermann, R.¹ Menke, T.² Dittmann, R.³ Waser, R.⁴

14
- 46749093701
- 10.1038/nnano.2008.160
- J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nature Nanotechnol. 3, 429 (2008). 10.1038/nnano.2008.160
- (2008) Nature Nanotechnol. , vol.3 , pp. 429
- Yang, J.J.¹ Pickett, M.D.² Li, X.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

15
- 43549126477
- Resistive switching in transition metal oxides
- DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196
- A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6 (Pubitemid 351680723)
- (2008) Materials Today , vol.11 , Issue.6 , pp. 28-36
- Sawa, A.¹

16
- 67349117817
- 10.1038/nmat2432
- C.-H. Yang, J. Seidel, S. Y. Kim, P. B. Rossen, P. Yu, M. Gajek, Y. H. Chu, L. W. Martin, M. B. Holcomb, Q. He, P. Maksymovych, N. Balke, S. V. Kalinin, A. P. Baddorf, S. R. Basu, M. L. Scullin, and R. Ramesh, Nature Mater. 8, 485 (2009). 10.1038/nmat2432
- (2009) Nature Mater. , vol.8 , pp. 485
- Yang, C.-H.¹ Seidel, J.² Kim, S.Y.³ Rossen, P.B.⁴ Yu, P.⁵ Gajek, M.⁶ Chu, Y.H.⁷ Martin, L.W.⁸ Holcomb, M.B.⁹ He, Q.¹⁰ Maksymovych, P.¹¹ Balke, N.¹² Kalinin, S.V.¹³ Baddorf, A.P.¹⁴ Basu, S.R.¹⁵ Scullin, M.L.¹⁶ Ramesh, R.¹⁷

17
- 51349092844
- 10.1063/1.2969785
- X. H. Zhu, H. Béa, M. Bibes, S. Fusil, K. Bouzehouane, E. Jacquet, A. Barthélémy, D. Lebeugle, M. Viret, and D. Colson, Appl. Phys. Lett. 93, 082902 (2008). 10.1063/1.2969785
- (2008) Appl. Phys. Lett. , vol.93 , pp. 082902
- Zhu, X.H.¹ Béa, H.² Bibes, M.³ Fusil, S.⁴ Bouzehouane, K.⁵ Jacquet, E.⁶ Barthélémy, A.⁷ Lebeugle, D.⁸ Viret, M.⁹ Colson, D.¹⁰

18
- 18844441261
- 3 thin films processed via chemical solution deposition: Structural and electrical characterization
- DOI 10.1063/1.1881776, 094901
- S. Iakovlev, C.-H. Solterbeck, M. Kuhnke, and M. Es-Souni, J. Appl. Phys. 97, 094901 (2005). 10.1063/1.1881776 (Pubitemid 40690710)
- (2005) Journal of Applied Physics , vol.97 , Issue.9 , pp. 1-6
- Iakovlev, S.¹ Solterbeck, C.-H.² Kuhnke, M.³ Es-Souni, M.⁴

19
- 75749108208
- 10.1063/1.3291044
- H. Yang, Y. Q. Wang, H. Wang, and Q. X. Jia, Appl. Phys. Lett. 96, 012909 (2010). 10.1063/1.3291044
- (2010) Appl. Phys. Lett. , vol.96 , pp. 012909
- Yang, H.¹ Wang, Y.Q.² Wang, H.³ Jia, Q.X.⁴

20
- 70149124047
- 10.1088/0022-3727/42/16/162001
- Y. Wang and J. Wang, J. Phys. D: Appl. Phys. 42, 162001 (2009). 10.1088/0022-3727/42/16/162001
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 162001
- Wang, Y.¹ Wang, J.²

21
- 10044237971
- 10.1063/1.1812580
- A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004). 10.1063/1.1812580
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4073
- Sawa, A.¹ Fujii, T.² Kawasaki, M.³ Tokura, Y.⁴

22
- 77957563001
- 10.1103/PhysRevB.82.085319
- L. Pintilie, V. Stancu, L. Trupina, and I. Pintilie, Phys. Rev. B 82, 085319 (2010). 10.1103/PhysRevB.82.085319
- (2010) Phys. Rev. B , vol.82 , pp. 085319
- Pintilie, L.¹ Stancu, V.² Trupina, L.³ Pintilie, I.⁴

23
- 64249168806
- 10.1126/science.1168636
- T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin, and S.-W. Cheong, Science 324, 63 (2009). 10.1126/science.1168636
- (2009) Science , vol.324 , pp. 63
- Choi, T.¹ Lee, S.² Choi, Y.J.³ Kiryukhin, V.⁴ Cheong, S.-W.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.